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NGTB40N65FL2WG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2015
September, 2016 − Rev. 2
1 Publication Order Number:
NGTB40N65FL2W/D
NGTB40N65FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
650 V
Collector current
@ TC = 25°C
@ TC = 100°C
I
C
80
40
A
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
I
F
80
40
A
Diode Pulsed Current
T
PULSE
Limited by T
J
Max
I
FM
160 A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
160 A
Short−circuit withstand time
V
GE
= 15 V, V
CE
= 400 V,
T
J
≤ +150°C
t
SC
5
ms
Gate−emitter voltage
V
GE
$20 V
Transient gate−emitter voltage
(T
PULSE
= 5 ms, D < 0.10)
$30 V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
366
183
W
Operating junction temperature
range
T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340AL
C
G
40 A, 650 V
V
CEsat
= 1.7 V
E
OFF
= 0.44 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N65FL2WG TO−247
(Pb−Free)
30 Units / Rail
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
40N65FL2
AYWWG
G
E
C
NGTB40N65FL2WG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.41 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
1.00 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
650 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 40 A
V
GE
= 15 V, I
C
= 40 A, T
J
= 175°C
V
CEsat
1.50
−
1.70
2.10
2.00
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 350 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 650 V
V
GE
= 0 V, V
CE
= 650 V, T
J
=
175°C
I
CES
−
−
−
−
0.5
7.0
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 200 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 4060 −
pF
Output capacitance C
oes
− 179 −
Reverse transfer capacitance C
res
− 115 −
Gate charge total
V
CE
= 480 V, I
C
= 40 A, V
GE
= 15 V
Q
g
− 170 −
nC
Gate to emitter charge Q
ge
− 41 −
Gate to collector charge Q
gc
− 87 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 40 A
R
g
= 10 W
V
GE
= 0 V/ 15 V
t
d(on)
− 84 −
ns
Rise time t
r
− 40 −
Turn−off delay time t
d(off)
− 177 −
Fall time t
f
− 70 −
Turn−on switching loss E
on
− 0.97 −
mJ
Turn−off switching loss E
off
− 0.44 −
Total switching loss E
ts
− 1.41 −
Turn−on delay time
T
J
= 150°C
V
CC
= 400 V, I
C
= 40 A
R
g
= 10 W
V
GE
= 0 V/ 15 V
t
d(on)
− 82 −
ns
Rise time t
r
− 40 −
Turn−off delay time t
d(off)
− 183 −
Fall time t
f
− 93 −
Turn−on switching loss E
on
− 1.20 −
mJ
Turn−off switching loss E
off
− 0.76 −
Total switching loss E
ts
− 1.96 −
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 40 A
V
GE
= 0 V, I
F
= 40 A, T
J
= 175°C
V
F
1.50
−
2.20
2.40
2.90
−
V
Reverse recovery time
T
J
= 25°C
I
F
= 40 A, V
R
= 200 V
di
F
/dt = 200 A/ms
t
rr
− 72 − ns
Reverse recovery charge Q
rr
− 275 − nC
Reverse recovery current I
rrm
− 6.7 − A
Reverse recovery time
T
J
= 175°C
I
F
= 40 A, V
R
= 400 V
di
F
/dt = 200 A/ms
t
rr
− 158 − ns
Reverse recovery charge Q
rr
− 980 − nC
Reverse recovery current I
rrm
− 8.5 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NGTB40N65FL2WG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
86543210
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
100
Figure 5. V
CE(sat)
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
1751501251007550250
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
7
V
GE
= 15 V
to 20 V
T
J
= 25°C
9 V
8 V
7 V
8654321
I
C
, COLLECTOR CURRENT (A)
7
T
J
= 150°C
9 V
8 V
7 V
86543210
I
C
, COLLECTOR CURRENT (A)
7
T
J
= −55°C
9 V
8 V
T
J
= 25°C
T
J
= 150°C
200
V
GE
= 17 V
to 20 V
V
GE
= 20 V
to 15 V
24 68
−75 −50 −25
2.50
2.00
1.50
1.00
0.75
0.50
Figure 6. Typical Capacitance
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
908050403020100
C, CAPACITANCE (pF)
100
C
ies
C
oes
C
res
7060
10 V
11 V
10 V
11 V
7 V
10 V
11 V
12
T
J
= 25°C
120
100
80
60
40
20
0
10,000
1000
100
10
160
0
140
160
14 16 18
3.00
140
120
100
80
60
40
20
0
13 V
13 V
15 V
160
140
120
100
80
60
40
20
0
13 V
160
140
120
100
80
60
40
20
0
2.75
2.25
1.75
1.25
I
C
= 60 A
I
C
= 40 A
I
C
= 20 A
I
C
= 5 A
P1-P3P4-P6P7-P9P10-P10

NGTB40N65FL2WG

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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/40A FAST IGBT FSII T
Lifecycle:
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