NGTB40N65FL2WG

NGTB40N65FL2WG
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7
TYPICAL CHARACTERISTICS
Figure 23. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.0001
1
SQUARE−WAVE PEAK R(t) (°C/W)
0.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.41
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(°C/W) C
i
(J/°C)
0.0537 0.0019
0.000001
0.0350
0.0426
0.1183
0.1455
0.0191
0.0090
0.0235
0.0267
0.0687
1.6573
Figure 24. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
1
R
q
JC
= 1.00
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
10.10.010.00010.000001 0.00001 0.001
R
i
(°C/W) C
i
(J/°C)
0.0000640.015509
0.1
0.01
0.020310
0.022591
0.050667
0.093366
0.195285
0.133203
0.173839
0.251384
0.039982
0.000492
0.001400
0.001974
0.003387
0.005121
0.023740
0.057525
0.125795
2.501137
NGTB40N65FL2WG
www.onsemi.com
8
Figure 25. Test Circuit for Switching Characteristics
Figure 26. Definition of Turn On Waveform
NGTB40N65FL2WG
www.onsemi.com
9
Figure 27. Definition of Turn Off Waveform

NGTB40N65FL2WG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/40A FAST IGBT FSII T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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