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NGTB40N65FL2WG
P1-P3
P4-P6
P7-P9
P10-P10
NGTB40N65FL2WG
www
.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 23. IGBT T
ransient Thermal Impedance
ON−PULSE WIDTH (s)
1
0.1
0.01
0.0001
1
SQUARE−W
A
VE PEAK R(t) (
°
C/W)
0.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.41
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(
°
C/W)
C
i
(J/
°
C)
0.0537
0.0019
0.000001
0.0350
0.0426
0.1
183
0.1455
0.0191
0.0090
0.0235
0.0267
0.0687
1.6573
Figure 24. Diode T
ransient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−W
A
VE PEAK R(t) (
°
C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
1
R
q
JC
= 1.00
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
1
0.1
0.01
0.0001
0.000001
0.00001
0.001
R
i
(
°
C/W)
C
i
(J/
°
C)
0.000064
0.015509
0.1
0.01
0.020310
0.022591
0.050667
0.093366
0.195285
0.133203
0.173839
0.251384
0.039982
0.000492
0.001400
0.001974
0.003387
0.005121
0.023740
0.057525
0.125795
2.501
137
NGTB40N65FL2WG
www
.onsemi.com
8
Figure 25. T
est Circuit for Switching Characteristics
Figure 26. Definition of T
urn On Waveform
NGTB40N65FL2WG
www
.onsemi.com
9
Figure 27. Definition of T
urn Off Waveform
P1-P3
P4-P6
P7-P9
P10-P10
NGTB40N65FL2WG
Mfr. #:
Buy NGTB40N65FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/40A FAST IGBT FSII T
Lifecycle:
New from this manufacturer.
Delivery:
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NGTB40N65FL2WG