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IRFR3911TRPBF

P1-P3P4-P6P7-P9P10-P11
www.irf.com 1
12/06/04
IRFR3911PbF
IRFU3911PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
100V 0.115Ω 14A
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 14
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 9.5 A
I
DM
Pulsed Drain Current 56
P
D
@T
C
= 25°C Power Dissipation 56 W
Linear Derating Factor 0.37 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 7.1 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes through are on page 10
D-Pak
IRFR3911
I-Pak
IRFU3911
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.7
R
θJA
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
PD - 95373A
2 www.irf.com
IRFR/U3911PbF
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 9.6 ––– ––– S V
DS
= 50V, I
D
= 8.4A
Q
g
Total Gate Charge ––– 21 32 I
D
= 8.4A
Q
gs
Gate-to-Source Charge ––– 4.3 6.5 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 6.6 9.9 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 7.9 ––– V
DD
= 500V
t
r
Rise Time ––– 26 ––– I
D
= 8.4A
t
d(off)
Turn-Off Delay Time ––– 52 ––– R
G
= 22Ω
t
f
Fall Time ––– 25 ––– V
GS
= 10V
C
iss
Input Capacitance ––– 740 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 110 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 18 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 700 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 61 ––– V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 130 ––– V
GS
= 0V, V
DS
= 0V to 80V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 68 mJ
I
AR
Avalanche Current ––– 8.4 A
E
AR
Repetitive Avalanche Energy ––– 0.0056 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 8.4A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 86 ––– ns T
J
= 25°C, I
F
= 8.4A
Q
rr
Reverse RecoveryCharge ––– 290 ––– nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
14
56
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.115 Ω V
GS
= 10V, I
D
= 8.4A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
I
GSS
I
DSS
Drain-to-Source Leakage Current
www.irf.com 3
IRFR/U3911PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
3.0 5.0 7.0 9.0 11.0 13.0 15.0
V
GS
, Gate-to-Source Voltage (V)
1.00
10.00
100.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
14A
P1-P3P4-P6P7-P9P10-P11

IRFR3911TRPBF

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Description:
MOSFET
Lifecycle:
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