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IRFR3911TRPBF
P1-P3
P4-P6
P7-P9
P10-P11
4
www.irf.com
IRFR/U391
1PbF
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-t
o-S
ource V
olt
age (V
)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
=
C
gs
+ C
gd
, C
ds
S
H
O
R
T
E
D
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
5
10
15
20
25
0
2
5
7
10
12
Q , T
ota
l Ga
te Ch
arge (nC)
V , Gate-
to-Sour
ce Voltage (
V)
G
GS
I
=
D
8.4A
V
=
20V
DS
V
=
50V
DS
V
=
80V
DS
0.0
0.5
1.0
1.5
2.0
V
SD
, S
ource-
toD
rai
n Vol
tage (
V)
0.10
1.00
10.00
100.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25
°C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rai
n-t
oSour
ce Vol
tage (
V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
=
175°C
Si
ngl
e Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
www.irf.com
5
IRFR/U391
1PbF
Fig 10a.
Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤
1
µs
Duty Factor
≤ 0.1
%
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
0
3
6
9
12
15
T ,
Cas
e Temp
er
at
ur
e
( C)
I , D
rai
n Cur
rent (
A)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
No
t
e
s
:
1. Du
ty
factor D =
t / t
2. Peak
T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rec
tangul
ar Pul
s
e Durati
on (
s
ec)
Therm
al Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D =
0.50
SING
LE PULSE
(TH
ERM
AL RESPO
NSE)
6
www.irf.com
IRFR/U391
1PbF
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
D
S
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resist
ors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.0
1
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25
50
75
100
125
150
175
0
24
48
72
96
120
Sta
rti
ng T , Ju
ncti
on Tem
pera
ture
( C)
E , S
ingle P
ulse A
valanche E
nergy (mJ
)
J
AS
°
I
D
TOP
BOTTOM
3.4A
5.9A
8.4A
P1-P3
P4-P6
P7-P9
P10-P11
IRFR3911TRPBF
Mfr. #:
Buy IRFR3911TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET
Lifecycle:
New from this manufacturer.
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