PS9905 Chapt
R08DS0058EJ0100 Rev.1.00 Page 9 of 18
Jun 11, 2012
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Detector Power Dissipation P
C
(mW)
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Threshold Input Current I
FLH
(mA)
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
20 40 60 80 120
100
0
60
50
40
30
20
10
20 40 60 80 120
100
0
300
250
200
150
100
50
6.0
5.0
4.0
3.0
2.0
1.0
0
−40 −200 20406080100
Forward Current I
F
(mA)
Output Voltage V
O
(V)
OUTPUT VOLTAGE vs.
FORWARD CURRENT
1024365
35
30
25
20
15
10
5
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
1
0.01
0.1
1
10
100
1.5 2
T
A
= +110°C
+100°C
+85°C
+50°C
+25°C
−20°C
−40°C
High Level Output Voltage – Supply
Voltage V
OH
– V
CC
(V)
High Level Output Current I
OH
(A)
HIGH LEVEL OUTPUT VOLTAGE – SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
0 0.5 1.0 1.5 2.52.0
0
−8
−6
−4
−2
−40°C
+25°C
V
CC
= 30 V,
V
EE
= GND,
V
O
> 5 V
T
A
= 25°C,
V
CC
= 30 V,
V
EE
= GND
V
CC
= 30 V,
V
EE
= GND,
I
F
= 12 mA
T
A
= +110°C
2.4
Remark The graphs indicate nominal characteristics.
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