IXFH150N17T2 Datasheet IXFH150N17T2, IXFT150N17T2 | P1-P3

DS100229(01/10)

V

DSS

= 175V

I

D25

= 150A

R

DS(on)

≤≤

≤ 12.0m

ΩΩ

Ω

t

rr

≤≤

≤ 160ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 175 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 175 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 150 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

400 A

I

A

T

C

= 25°C75A

E

AS

T

C

= 25°C 1.0 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 175°C 15 V/ns

P

D

T

C

= 25°C 880 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

IXFH150N17T2

IXFT150N17T2

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 175 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 2.5 4.5 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 10 μA

T

J

= 150°C 1.5 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 9.7 12.0 mΩ

Advance Technical Information

TrenchT2

TM

HiperFET

TM

Power MOSFET

Features

z

High Current Handling Capability

z

Fast Intrinsic Diode

z

Dynamaic dv/dt Rated

z

Avalanche Rated

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

AC Motor Drives

z

Uninterruptible Power Supplies

z

High Speed Power Switching

Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-268 (IXFT)

S

G

D (Tab)

TO-247 (IXFH)

G

S

D (Tab)

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH150N17T2

IXFT150N17T2

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 100 165 S

C

iss

14.6 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1100 pF

C

rss

136 pF

t

d(on)

32 ns

t

r

16 ns

t

d(off)

50 ns

t

f

20 ns

Q

g(on)

233 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

67 nC

Q

gd

63 nC

R

thJC

0.17 °C/W

R

thCS

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 150 A

I

SM

Repetitive, Pulse Width Limited by T

JM

600 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.3 V

t

rr

160 ns

I

RM

7.80 A

Q

RM

0.34 μC

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

I

F

= 75A, -di/dt = 100A/μs

V

R

= 75V, V

GS

= 0V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

e

∅ P

TO-247 (IXFH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXFT) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

4V

6V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

20

40

60

80

100

120

140

160

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5

V

4

V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 75A Value

vs. Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 75A

I

D

= 150A

Fig. 5. R

DS(on)

Normalized to I

D

= 75A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 50 100 150 200 250 300

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

012345678910

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

IXFH150N17T2

IXFT150N17T2

IXFH150N17T2

IXFH150N17T2

Products related to this Datasheet