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IXFH150N17T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH150N17T2
IXFT150N17T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 85V
I
D
= 75A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1
10
100
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - NanoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0
1
10
100
1,000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
DC
25µs
© 2010 IXYS CORPORATION, All Rights Reserved
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
14
15
16
17
18
19
20
21
22
23
24
30 40 50 60 70 80 90 100 110 120 130 140 150
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 85V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
12345678910
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
80
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 85V
I
D
= 75A
I
D
= 150A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
6
10
14
18
22
26
30
34
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
75
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 85V
I
D
= 150A, 75A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
15
16
17
18
19
20
21
22
30 40 50 60 70 80 90 100 110 120 130 140 150
I
D
- Amperes
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 85V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
14
15
16
17
18
19
20
21
22
23
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 85V
I
D
= 150A
I
D
= 75A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 85V
I
D
= 150A
I
D
= 75A
IXFH150N17T2
IXFT150N17T2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH150N17T2
IXFT150N17T2
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF:F_150N17T2(7V)1-14-10
P1-P3P4-P6

IXFH150N17T2

Mfr. #:
Buy IXFH150N17T2
Manufacturer:
Littelfuse
Description:
MOSFET 175V 150A
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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