Si4143DY
www.vishay.com
Vishay Siliconix
S14-0910-Rev. A, 28-Apr-14
2
Document Number: 63242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -30 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= -250 μA
--23-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
-4.9-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1 - -2.5 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 25 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -30 V, V
GS
= 0 V - - -1
μA
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C - - -5
On-State Drain Current
a
I
D(on)
V
DS
≥ -10 V, V
GS
= -10 V -30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -12 A - 0.0051 0.0062
ΩV
GS
= -6 V, I
D
= -8 A - 0.0061 0.0074
V
GS
= -4.5 V, I
D
= -5 A - 0.0076 0.0092
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -15 A - 64 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
- 6630 -
pFOutput Capacitance C
oss
- 750 -
Reverse Transfer Capacitance C
rss
- 710 -
Total Gate Charge Q
g
V
DS
= -15 V, V
GS
= -10 V, I
D
= -18 A - 111 167
nC
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -18 A
-5481
Gate-Source Charge Q
gs
- 19.5 -
Gate-Drain Charge Q
gd
- 15.5 -
Gate Resistance R
g
f = 1 MHz 0.5 2.3 4.6 Ω
Turn-On Delay Time t
d(on)
V
DD
= -15 V, R
L
= 1.5 Ω
I
D
≅ -10 A, V
GEN
= -10 V, R
g
= 1 Ω
-1827
ns
Rise Time t
r
-816
Turn-Off Delay Time t
d(off)
-71107
Fall Time t
f
-1523
Turn-On Delay Time t
d(on)
V
DD
= -15 V, R
L
= 1.5 Ω
I
D
≅ -10 A, V
GEN
= -4.5 V, R
g
= 1 Ω
-5989
Rise Time t
r
-6090
Turn-Off Delay Time t
d(off)
-5684
Fall Time t
f
-2944
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - - -5
A
Pulse Diode Forward Current I
SM
---70
Body Diode Voltage V
SD
I
S
= -10 A, V
GS
= 0 V - -0.78 -1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= -10 A, dI/dt = 100 A/μs, T
J
= 25 °C
-4263ns
Body Diode Reverse Recovery Charge Q
rr
-3756nC
Reverse Recovery Fall Time t
a
-17-
ns
Reverse Recovery Rise Time t
b
-25-
