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SI4143DY-T1-GE3

P1-P3P4-P6P7-P9
Si4143DY
www.vishay.com
Vishay Siliconix
S14-0910-Rev. A, 28-Apr-14
4
Document Number: 63242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
I
S
-Source Current (A)
V
SD
-Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
0.002
0.005
0.008
0.011
0.014
2 4 6 8 10
R
DS(on)
-On-Resistance (Ω)
V
GS
-Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 15 A
0
30
10
20
Power (W)
Time (s)
160010010
-1
10
-2
10
5
25
15
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
0.01
0.1
1
10
100
0.1 1 10 100
1 s
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
10 s
DC,
Limited by I
DM
Si4143DY
www.vishay.com
Vishay Siliconix
S14-0910-Rev. A, 28-Apr-14
5
Document Number: 63242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Current Derating*
Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
7
14
21
28
0 25 50 75 100 125 150
I
D
-Drain Current (A)
T
C
- Case Temperature (°C)
0
1.8
3.6
5.4
7.2
0 25 50 75 100 125 150
Power (W)
T
C
-Case Temperature (°C)
0.0
0.5
0.9
1.4
1.8
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
Si4143DY
www.vishay.com
Vishay Siliconix
S14-0910-Rev. A, 28-Apr-14
6
Document Number: 63242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63242
.
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9

SI4143DY-T1-GE3

Mfr. #:
Buy SI4143DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 25V Vgs SO-8
Lifecycle:
New from this manufacturer.
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