APT100GT60JR Datasheet APT100GT60JR | P1-P3

052-6274 Rev B 7-2010

APT100GT60JRTYPICAL PERFORMANCE CURVES

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 4mA)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 1.5mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±30V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

MIN TYP MAX

600

3 4 5

1.7 2.1 2.5

2.5

25

TBD

300

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁ ed.

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

APT100GT60JR

600

±30

148

80

300

300A @ 600V

500

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current

@ T

C

= 25°C

Continuous Collector Current @ T

C

= 100°C

Pulsed Collector Current

1

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

The Thunderblot IGBT

®

is a new generation of high voltage power IGBTs. Using Non- Punch

Through Technology, the Thunderblot

IGBT

®

offers superior ruggedness and ultrafast

switching speed.

• Low Forward Voltage Drop • High Freq. Switching to 80KHz

• Low Tail Current • Ultra Low Leakage Current

• RBSOA and SCSOA Rated

Thunderbolt IGBT

®

G

C

E

S

O

T

-2

2

7

ISOTOP

®

file # E145592

"UL Recognized"

G

E

C

600V

APT100GT60JR

STATIC ELECTRICAL CHARACTERISTICS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

052-6274 Rev B 7-2010

APT100GT60JR

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 300V

I

C

= 100A

T

J

= 150°C, R

G

= 4.3Ω, V

GE

=

15V, L = 100µH,V

CE

= 600V

Inductive Switching (25°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 100A

R

G

= 4.3Ω

T

J

= +25°C

Inductive Switching (125°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 100A

R

G

= 4.3Ω

T

J

= +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

55

Turn-off Switching Energy

66

MIN TYP MAX

5430

508

312

8.0

460

40

210

300

40

75

320

100

3250

3525

3125

40

75

350

100

3275

4650

3750

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

For Combi devices, I

ces

includes both IGBT and FRED leakages

3

See MIL-STD-750 Method 3471.

4

E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁ gure 21, but with a Silicon Carbide diode.

5

E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6

E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

Microsemi Reserves the right to change, without notice, the speciﬁ cations and information contained herein.

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

Volts

MIN TYP MAX

.25

N/A

29.2

2500

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

RMS Voltage

(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)

Symbol

R

θ

JC

R

θ

JC

W

T

V

Isolation

052-6274 Rev B 7-2010

APT100GT60JRTYPICAL PERFORMANCE CURVES

V

GS(TH)

, THRESHOLD VOLTAGE V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

(NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

V

CE

= 480V

V

CE

= 300V

V

CE

= 120V

I

C

= 100A

T

J

= 25°C

250µs PULSE

TEST<0.5 % DUTY

CYCLE

200

180

160

140

120

100

80

60

40

20

0

200

180

160

140

120

100

80

60

40

20

0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

300

250

200

150

100

50

0

16

14

12

10

8

6

4

2

0

4

3.5

3

2.5

2

1.5

1

0.5

0

200

180

160

140

120

100

80

60

40

20

0

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(V

GE

= 15V) FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

T

C

= 125°C

12, 13, &15V

10V

9V

8V

7V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 200A

I

C

= 100A

I

C

= 50A

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 200A

I

C

= 100A

I

C

= 50A

0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30

0 2 4 6 8 10 0 100 200 300 400 500

6 8 10 12 14 16 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

C

= 25°C

T

C

= -55°C

V

GE

= 15V

6V

APT100GT60JR

APT100GT60JR

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