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APT100GT60JR

P1-P3P4-P6
052-6274 Rev B 7-2010
APT100GT60JR
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.3Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3Ω
R
G
= 4.3Ω, L = 100µH, V
CE
= 400V
V
CE
= 400V
T
J
= 25°C, or 125°C
R
G
= 4.3Ω
L = 100µH
35
30
25
20
15
10
5
0
250
200
150
100
50
0
16000
14000
12000
10000
8000
6000
4000
2000
0
35000
30000
25000
20000
15000
10000
5000
0
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
T
J
= 125°C
T
J
= 25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3Ω
T
J
= 125°C
T
J
= 25°C
0 25 50 75 100 125 150 175 200 225 0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225 0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225 0 25 50 70 100 125 150 175 200 225
0 10 20 30 40 50 0 25 50 75 100 125
R
G
= 4.3Ω, L = 100µH, V
CE
= 400V
450
400
350
300
250
200
150
100
50
0
200
180
160
140
120
100
80
60
40
20
0
12000
10000
8000
6000
4000
2000
0
16000
14000
12000
10000
8000
6000
4000
2000
0
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3Ω
E
off,
200A
E
on2,
200A
E
off,
100A
E
on2,
100A
E
off,
50A
E
on2,
50A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
off,
200A
E
on2,
200A
E
off,
100A
E
on2,
100A
E
off,
50A
E
on2,
50A
052-6274 Rev B 7-2010
APT100GT60JRTYPICAL PERFORMANCE CURVES
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
10,000
5,000
1,000
500
100
350
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 100 200 300 400 500 600 700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80 90 100
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
100
50
10
5
1
C
0es
C
res
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
C
ies
T
J
= 125°C
D = 50 %
V
CE
= 400V
R
G
= 4.3Ω
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
T
C
= 75°C
T
C
= 100°C
0.0587 0.132 0.0587
0.0120 0.420 4.48
Dissipated Power
(Watts)
T
J
(°C) T
C
(°C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
052-6274 Rev B 7-2010
APT100GT60JR
Figure 22, Turn-on Switching Waveforms and Defi nitions
Figure 23, Turn-off Switching Waveforms and Defi nitions
T
J
= 125°C
Collector Current
CollectorVoltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
CollectorVoltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT100DQ60
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
P1-P3P4-P6

APT100GT60JR

Mfr. #:
Buy APT100GT60JR
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules FG, IGBT, 600V, 100A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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