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MASW-003100-11920W

P1-P3P4-P6P7-P9
V6
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Features
♦ Broad Bandwidth
♦ Specified from 50MHz to 20GHz
♦ Usable from 50MHz to 26.5GHz
♦ Lower Insertion Loss / Higher Isolation
than pHempt
♦ Rugged
♦ Fully Monolithic,
♦ Glass Encapsulated Construction
♦ Up to +33dBm C.W. Power Handling
♦ RoHS Compliant
Description
The MASW-001100-1190, MASW-002100-1191 and
MASW-003100-1192 are broadband monolithic
switches using series and shunt connected silicon
PIN diodes. They are designed for use as 2W, high
performance switches in applications up to 26.5GHz.
They provide performance levels superior to those
realized by hybrid MIC designs incorporating
beamlead and PIN chip diodes that require chip and
wire assembly.
These switches are fabricated using M/A-COM’s
patented HMIC
TM
(Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that
form series and shunt diodes or vias by imbedding
them in low loss, low dispersion glass. By using
small spacing between elements, this combination of
silicon and glass gives HMIC devices low loss and
high isolation performance through low
millimeter frequencies.
Large bond pads facilitate the use of low inductance
ribbon leads, while gold backside metallization
allows for manual or automatic chip bonding via
80/20, AuSn solder or conductive Ag epoxy.
Parameter Absolute Maximum
Operating Temperature -65
o
C to +125
o
C
Storage Temperature -65
o
C to +150
o
C
Junction Temperature +175
o
C
Applied Reverse Voltage | - 50V |
RF C.W. Incident Power +33dBm C.W.
Bias Current +25°C ±20mA
MASW-001100-1190
Max operating Conditions for a Combination of
RF Power, D.C. Bias and Temperature:
+33dBm CW @ 15mA (per diode) @+85°C
MASW-002100-1191
MASW-003100-1192
V6
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
MASW-001100-1190 (SPST)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias
Parameter Frequency Minimum Nominal Maximum Units
6GHz - 0.4 0.7 dB
Insertion Loss 13GHz - 0.5 0.9 dB
20GHz - 0.7 1.2 dB
6GHz 46 55 - dB
Isolation 13GHz 39 47 - dB
20GHz 34 42 - dB
6GHz 22 31 - dB
Input Return Loss 13GHz 15 33 - dB
20GHz 14 27 - dB
Switching Speed
1
- - 20 - ns
Voltage Rating
2
- - - 50 V
Signal Compression (500mW) 1GHz - 0.2 - dB
MASW-002100-1191 (SPDT)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias
Parameter Frequency Minimum Nominal Maximum Units
6GHz - 0.4 0.7 dB
Insertion Loss 13GHz - 0.5 1.0 dB
20GHz - 0.7 1.2 dB
6GHz 48 63 - dB
Isolation 13GHz 40 50 - dB
20GHz 34 42 - dB
6GHz 20 27 - dB
Input Return Loss 13GHz 18 25 - dB
20GHz 15 25 - dB
Switching Speed
1
- - 20 - ns
Voltage Rating
2
- - - 50 V
Signal Compression (500mW)
1GHz - 0.2 - dB
Parameter Frequency Minimum Nominal Maximum Units
6GHz - 0.5 0.8
dB
Insertion Loss 13GHz - 0.7 1.1
dB
20GHz - 0.9 1.5
dB
6GHz 49 57 -
dB
Isolation 13GHz 42 48 -
dB
20GHz 33 42 -
dB
6GHz 20 24 -
dB
Input Return Loss 13GHz 14 22 -
dB
20GHz 11 21 -
dB
Switching Speed
1
- - 20 -
ns
Voltage Rating
2
- - - 50
V
Signal Compression (500mW) 1GHz - 0.2 -
dB
MASW-003100-1192 (SP3T)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias
1.) Typical Switching Speed measured from 10 % to 90 % of
detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or
series PIN diodes shall be 10mA maximum at -50 volts.
1.) Typical Switching Speed measured from 10 % to 90 % of
detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or
series PIN diodes shall be 10mA maximum at -50 volts.
V6
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
HMIC™ Silicon PIN Diode Switches
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
Typical Performance Curves at T
A
= +25°C, 20mA Bias Current
MASW-001100-1190
RETURN LOSS vs. FREQUENCY
-35
-30
-25
-20
-15
-10
0 5 10 15 20 25 30
FREQUENCY (GHz)
RETURN LOSS (dB
)
Input Return Loss
Output Return Loss
MASW-001100-1190
INSERTION LOSS vs. FREQUENCY
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
0 5 10 15 20 25 30
FREQUENCY (GHz)
INSERTION LOSS (d
B
MASW-002100-1191
RETURN LOSS vs. FREQUENCY
-35
-30
-25
-20
-15
-10
0 5 10 15 20 25 30
FREQUENCY (GHz)
RETURN LOSS (dB
)
Input Return Loss
Output Return Loss
MASW-002100-1191
INSERTION LOSS vs. FREQUENCY
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
0 5 10 15 20 25 30
FREQUENCY (GHz)
INSERTION LOSS (d
B
MASW-003100-1192
RETURN LOSS vs. FREQUENCY
-30
-25
-20
-15
-10
0 5 10 15 20 25 30
FREQUENCY (GHz)
RETURN LOSS (dB
)
Input Return Loss
Output Return Loss
MASW-003100-1192
INSERTION LOSS vs. FREQUENCY
-1.2
-1.1
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
0 5 10 15 20 25 30
FREQUENCY (GHz)
INSERTION LOSS (dB
S-Parameters: S-Parameter data for these devices are available upon request.
P1-P3P4-P6P7-P9

MASW-003100-11920W

Mfr. #:
Buy MASW-003100-11920W
Manufacturer:
MACOM
Description:
RF Switch ICs 50-26500MHz 2W -65C +125C Iso 65dB
Lifecycle:
New from this manufacturer.
Delivery:
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