Si1002R
www.vishay.com
Vishay Siliconix
S14-0770-Rev. A, 14-Apr-14
2
Document Number: 64257
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 μA
-29-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
--1.8-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.4 - 1 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V - - ± 30
μA
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C - - 3
On-State Drain Current
a
I
D(on)
V
DS
= ≥ 5 V, V
GS
= 4.5 V 2 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 0.5 A - 0.450 0.560
Ω
V
GS
= 2.5 V, I
D
= 0.2 A - 0.500 0.620
V
GS
= 1.8 V, I
D
= 0.2 A - 0.560 0.700
V
GS
= 1.5 V, I
D
= 0.05 A - 0.647 1.100
Forward Transconductance g
fs
V
DS
= 15 V, I
D
= 0.5 A - 7.5 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
-36-
pFOutput Capacitance C
oss
-9-
Reverse Transfer Capacitance C
rss
-5-
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 8 V, I
D
= 0.5 A - 1.2 2
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 0.5 A
- 0.72 1.2
Gate-Source Charge Q
gs
-0.1-
Gate-Drain Charge Q
gd
-0.16-
Gate Resistance R
g
f = 1 MHz 2.4 12.2 24.4 Ω
Turn-On Delay Time t
d(on)
V
DD
= 15 V, R
L
= 37.5 Ω
I
D
≅ 0.4 A, V
GEN
= 4.5 V, R
g
= 1 Ω
-615
ns
Rise Time t
r
-1324
Turn-Off Delay Time t
d(off)
-2030
Fall Time t
f
-1120
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
I
SM
--2A
Body Diode Voltage V
SD
I
S
= 0.5 A - 0.8 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 0.4 A, dI/dt = 100 A/μs
- 8 15 ns
Body Diode Reverse Recovery Charge Q
rr
-24nC
Reverse Recovery Fall Time t
a
-4-
ns
Reverse Recovery Rise Time t
b
-4-
