SI1002R-T1-GE3

Si1002R
www.vishay.com
Vishay Siliconix
S14-0770-Rev. A, 14-Apr-14
4
Document Number: 64257
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Soure-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
2
4
6
8
0 0.3 0.6 0.9 1.2 1.5
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 15 V
V
DS
= 8 V
I
D
=0.5 A
0.1
1
10
0 0.35 0.7 1.05 1.4
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.28
0.38
0.48
0.58
0.68
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, 2.5 V
V
GS
= 1.8 V, 1.5 V
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125
°
C
T
J
= 25
°
C
I
D
= 0.5 A
0
0.45
0.9
1.35
1.8
2.25
2.7
0.01 0.1 1 10 100
Power (W)
Time (s)
Si1002R
www.vishay.com
Vishay Siliconix
S14-0770-Rev. A, 14-Apr-14
5
Document Number: 64257
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64257
.
0.001
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25
°
C
BVDSS Limited
10 ms
100 μs
1 s
DC, 10 s
Limited by I
DM
0
0.05
0.1
0.15
0.2
0.25
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
Package Information
www.vishay.com
Vishay Siliconix
C15-1445-Rev. F, 23-Nov-15
1
Document Number: 71348
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-75A: 3 Leads
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C
M
BA –
2X
1 2
3
A
1
2
D
C
bbb
4
B
3
D
3
D
D
D
bbb
D
bbb
D
e2
B1(b1)
3
e1
2XB1
E1
2X
e3
2
E
E/2
D
bbb
4X
D
Seating Plane
A
A2
A1
Base Metal
With Tin Planting
Section B-B
5
B1
b1
C
c1
L2
L
L1
B
B
2X
1
ddd
C
C
1
1
DIMENSIONS TOLERANCES
aaa 0.10
bbb 0.10
ccc 0.10
ddd 0.10
DIM.
MILLIMETERS
NOTE
MIN. NOM. MAX.
A- -0.80
A1 0.00 - 0.10
A2 0.65 0.70 0.80
B1 0.19 - 0.24 5
b1 0.17 - 0.21
c0.13-0.155
c1 0.10 - 0.12 5
D 1.48 1.575 1.68 1, 2
E 1.50 1.60 1.70
E1 0.66 0.76 0.86 1, 2
e1 0.50 BSC
e2 1.00 BSC
e3 0.50 BSC
L 0.15 0.205 0.30
L1 0.40 ref.
L2 0.15 BSC
q0°-8°
q1 - 10°

SI1002R-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3
Lifecycle:
New from this manufacturer.
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