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CM100TX-24S

P1-P3P4-P6P7-P9P10-P10
<IGBT Modules>
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
C
.............….......................…
1
0
0
A
Collector-emitter voltage V
CES
......................…
1
2
0
0
V
Maximum junction temperature T
jmax
..............
1
7
5
°C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
sixpack (3φ Inverter)
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
Dimension in mm
TERMINAL
t=0.8
SECTION A
INTERNAL CONNECTION
GWP(17)
W(36~38)
EWP(18)
P1(28~30)
NTC
TH1(31)
TH2(32)
GWN(21)
EWN(22)
GVP(9)
V(42~44)
EVP(10)
GVP(13)
EVP(14)
GUP(1)
U(48~50)
EUP(2)
GUN(
5
)
EUN(6)
N1(23~25)
P(54~56)
N(59~61)
Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,
but should use all each three pins for the external wiring.
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
Publication Date : April 2014
1
<IGBT Modules>
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions Rating Unit
V
CES
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
I
C
Collector current
DC, T
C
=119 °C
(Note2, 4)
100
A
I
CRM
Pulse, Repetitive
(Note3)
200
P
tot
Total power dissipation
T
C
=25 °C
(Note2, 4)
750
W
I
E
(Note1)
Emitter current
DC
(Note2)
100
A
I
ERM
(Note1)
Pulse, Repetitive
(Note3)
200
MODULE
Symbol Item Conditions Rating Unit
V
isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
T
j max
Maximum junction temperature
Instantaneous event (overload)
175
°C
T
Cmax
Maximum case temperature
(Note4)
125
°C
T
j op
Operating junction temperature Continuous operation (under switching) -40 ~ +150
°C
T
stg
Storage temperature
-
-40 ~ +125
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol Item Conditions
Limits
Unit
Min.
Typ.
Max.
I
CES
Collector-emitter cut-off current
V
CE
=V
CES
, G-E short-circuited
-
-
1.0
mA
I
GES
Gate-emitter leakage current
V
GE
=V
GES
, C-E short-circuited
-
-
0.5
μA
V
GE(th)
Gate-emitter threshold voltage I
C
=10 mA, V
CE
=10 V 5.4 6.0 6.6 V
V
Cesat
(Terminal)
Collector-emitter saturation voltage
I
C
=100 A, V
GE
=15 V,
T
j
=25 °C
-
1.80
2.25
V
Refer to the figure of test circuit.
T
j
=125 °C
-
2.00
-
(Note6)
T
j
=150 °C
-
2.05
-
V
Cesat
(Chip)
I
C
=100 A, T
j
=25 °C - 1.70 2.15
V
V
GE
=15 V,
T
j
=125 °C
-
1.90
-
(Note6)
T
j
=150 °C
-
1.95
-
C
ies
Input capacitance
V
CE
=10 V, G-E short-circuited
-
-
10
nF
C
oes
Output capacitance - - 2.0
C
res
Reverse transfer capacitance
-
-
0.17
Q
G
Gate charge
V
CC
=600 V, I
C
=100 A, V
GE
=15 V
-
233
-
nC
t
d(on)
Turn-on delay time
V
CC
=600 V, I
C
=100 A, V
GE
=±15 V,
-
-
300
ns
t
r
Rise time - - 200
t
d(off)
Turn-off delay time
R
G
=6.2 Ω, Inductive load
-
-
600
t
f
Fall time
-
-
300
V
EC
(Note1)
(Terminal)
Emitter-collector voltage
I
E
=100 A, G-E short-circuited,
T
j
=25 °C
-
1.80
2.25
V
Refer to the figure of test circuit. T
j
=125 °C - 1.80 -
(Note6)
T
j
=150 °C
-
1.80
-
V
EC
(Note1)
(Chip)
I
E
=100 A,
T
j
=25 °C
-
1.70
2.15
V
G-E short-circuited,
T
j
=125 °C
-
1.70
-
(Note6)
T
j
=150 °C - 1.70 -
t
rr
(Note1)
Reverse recovery time
V
CC
=600 V, I
E
=100 A, V
GE
=±15 V,
-
-
300
ns
Q
rr
(Note1)
Reverse recovery charge
R
G
=6.2 Ω, Inductive load
-
5.3
-
μC
E
on
Turn-on switching energy per pulse
V
CC
=600 V, I
C
=I
E
=100 A,
-
8.6
-
mJ
E
off
Turn-off switching energy per pulse V
GE
=±15 V, R
G
=6.2 Ω, T
j
=150 °C, - 10.7 -
E
rr
(Note1)
Reverse recovery energy per pulse
Inductive load
-
10.2
-
mJ
R
CC'+EE'
Internal lead resistance
Main terminals-chip, per switch,
- - 3.5 mΩ
T
C
=25 °C
(Note4)
r
g
Internal gate resistance Per switch - 0 - Ω
Publication Date : April 2014
2
<IGBT Modules>
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
j
=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol Item Conditions
Limits
Unit
Min.
Typ.
Max.
R
25
Zero-power resistance
T
C
=25 °C
(Note4)
4.85
5.00
5.15
kΩ
ΔR/R
Deviation of resistance
R
100
=493 Ω, T
C
=100 °C
(Note4)
-7.3
-
+7.8
%
B
(25/50)
B-constant Approximate by equation
(Note6)
- 3375 - K
P
25
Power dissipation
T
C
=25 °C
(Note4)
-
-
10
mW
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
Limits
Unit
Min.
Typ.
Max.
R
th(j- c)Q
Thermal resistance
Junction to case, per Inverter IGBT
(Note4)
- - 0.20
K/W
R
th(j- c)D
Junction to case, per Inverter DIODE
(Note4)
-
-
0.29
R
th(c- s)
Contact thermal resistance
Case to heat sink, per 1 module,
- 15 - K/kW
Thermal grease applied
(Note4, 7)
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Limits
Unit
Min.
Typ.
Max.
M
s
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
d
s
Creepage distance
Terminal to terminal
10.28
-
-
mm
Terminal to base plate 12.41 - -
d
a
Clearance
Terminal to terminal
9.88
-
-
mm
Terminal to base plate
12.41
-
-
m
mass
-
-
300
-
g
e
c
Flatness of base plate On the centerline X, Y
(Note8)
±0 - +100 μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
j
) should not increase beyond T
jmax
rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
jmax
rating.
4. Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
,
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 self tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : April 2014
3
P1-P3P4-P6P7-P9P10-P10

CM100TX-24S

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Buy CM100TX-24S
Manufacturer:
Description:
IGBT MODULE NX 6-PAC 100A 1200V
Lifecycle:
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