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CM100TX-24S

P1-P3P4-P6P7-P9P10-P10
<IGBT Modules>
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
Limits
Unit
Min.
Typ.
Max.
V
CC
(DC) Supply voltage Applied across P-N/P1-N1 terminals - 600 850 V
V
GEon
Gate (-emitter drive) voltage
Applied across
13.5 15.0 16.5 V
G*P-E*P/G*N-E*N (*=U, V, W) terminals
R
G
External gate resistance
Per switch
6.2
-
62
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
V
CC
-V
GE
+V
GE
-V
GE
+
v
CE
v
GE
0
i
E
i
C
P
N
*
G*P
E*P
G*N
E*N
Load
R
G
*: U, V, W
N1
P1
～
t
t
f
t
r
t
d(on)
i
C
10%
90 %
90 %
v
GE
～
～
～
0 V
0 A
0
t
d(off)
t
I
rr
Q
rr
=0.5
×I
rr
×t
rr
0.5×I
rr
t
t
rr
i
E
0 A
I
E
Switching characteristics test circuit and waveforms t
rr
, Q
rr
test waveform
0.1
×
I
CM
I
CM
V
CC
v
CE
i
C
t
0
t
i
0.1×V
CC
0.1×V
CC
V
C
C
I
CM
v
CE
i
C
t
0
0.02×I
CM
t
i
I
EM
v
EC
i
E
t
0 V
t
i
t
V
CC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : April 2014
4
<IGBT Modules>
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
V
Short
-
circuited
54~56
48~50
59~61
I
C
1
2
5
6
V
GE
=15V
28
~30
23~25
V
Short-
circuited
54~56
42~44
59~61
I
C
9
10
13
14
V
GE
=15V
28~30
23~25
V
Short
-
circuited
54~56
36~38
59~61
I
C
17
18
21
22
V
GE
=15V
28~30
23~
25
V
Short-
circuited
54~56
48~50
59~61
I
C
1
2
5
6
V
GE
=15V
28~30
23~25
V
Short-
circuited
54~56
42~44
59~61
I
C
9
10
13
14
V
GE
=15V
28~30
23~25
V
Short-
circuited
54~56
36~38
59~61
I
C
17
18
21
22
V
GE
=15V
28~30
23~25
Gate-emitter
short-circuited
GVP-EVP, GVN-EVP,
GWP-EWN, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GWP-EWP, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GVP-EVP, GVN-EVN
UP / UN IGBT VP / VN IGBT WP / WN IGBT
V
CEsat
test circuit
V
Short-
circuited
54~56
48~50
59~61
I
E
1
2
5
6
28~30
23~25
Short-
circuited
V
Short-
circuited
54~56
42~44
59~61
I
E
9
10
13
14
28~30
23~25
Short-
circuited
V
Short-
circuited
54~56
36~38
59~61
I
E
17
18
21
22
28~30
23~25
Short-
circuited
V
Short-
circuited
54~56
48~50
59~61
I
E
1
2
5
6
28~30
23~25
Short-
circuited
V
Short-
circuited
54~56
42~44
59~61
I
E
9
10
13
14
28~30
23~25
Short-
circuited
V
Short-
circuited
54~56
36~38
59~61
I
E
17
18
21
22
28~30
23~25
Short-
circuited
Gate-emitter
short-circuited
GVP-EVP, GVN-EVP,
GWP-EWN, GWN-EWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EsUN,
GWP-EWP, GWN-EsWN
Gate-emitter
short-circuited
GUP-EUP, GUN-EUN,
GVP-EVP, GVN-EVN
UP / UN DIODE VP / VN DIODE WP / WN DIODE
V
EC
/ V
F
test circuit
Publication Date : April 2014
5
<IGBT Modules>
CM100TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
(TYPICAL)
T
j
=25 °C
(Chip)
V
GE
=15 V
(Chip)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION VOLTAGE
FREE WHEELING DIODE
CHARACTERISTICS
FORWARD CHARACTERISTICS
(TYPICAL)
(TYPICAL)
T
j
=25 °C
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
EMITTER CURRENT I
E
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
0
50
100
150
200
0 2 4 6 8 10
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150 200
0
2
4
6
8
10
6 8 10 12 14 16 18 20
1
10
100
1000
0 0.5 1 1.5 2 2.5 3
T
j
=150 °C
T
j
=125 °C
T
j
=25 °C
T
j
=125 °C
T
j
=25 °C
I
C
=200 A
I
C
=100 A
I
C
=40 A
V
GE
=20 V
12 V
11 V
10 V
9 V
13.5 V
15 V
T
j
=150 °C
Publication Date : April 2014
6
P1-P3P4-P6P7-P9P10-P10

CM100TX-24S

Mfr. #:
Buy CM100TX-24S
Manufacturer:
Description:
IGBT MODULE NX 6-PAC 100A 1200V
Lifecycle:
New from this manufacturer.
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