7
FN6088.5
July 31, 2007
During an overvoltage transient event, such as occurs during
system level IEC 61000 ESD testing, substrate currents can
be generated in the IC that can trigger parasitic SCR
structures to turn ON, creating a low impedance path from
the V+ power supply to ground. This will result in a
significant amount of current flow in the IC which can
potentially create a latch-up state or permanently damage
the IC. The external V+ resistor limits the current during this
over-stress situation and has been found to prevent latch-up
or destructive damage for many overvoltage transient
events.
Under normal operation, the sub-microamp I
DD
current of
the IC produces an insignificant voltage drop across the
100Ω series resistor resulting in no impact to switch
operation or performance.
Supply Sequencing and Overvoltage Protection
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND (see
Figure 9). To prevent forward biasing these diodes, V+ must
be applied before any input signals and the input signal
voltages must remain between V+ and GND.
If these conditions cannot be guaranteed, then precautions
must be implemented to prohibit the current and voltage at
the logic pin and signal pins from exceeding the maximum
ratings of the switch. The following two methods can be used
to provide additional protection to limit the current in the
event that the voltage at a signal pin or logic pin goes below
ground or above the V+ rail.
Logic inputs can easily be protected by adding a 1kΩ
resistor in series with the input (see Figure 9). The resistor
limits the input current below the threshold that produces
permanent damage and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
This method is not acceptable for the signal path inputs.
Adding a series resistor to the switch input defeats the
purpose of using a low r
ON
switch. Connecting Schottky
diodes to the signal pins as shown in Figure 9 will shunt the
fault current to the supply or to ground thereby protecting the
switch. These Schottky diodes must be sized to handle the
expected fault current.
.
Power-Supply Considerations
The ISL84684 construction is typical of most single supply
CMOS analog switches, in that they have two supply pins:
V+ and GND. V+ and GND drive the internal CMOS
switches and set their analog voltage limits. Unlike switches
with a 4V maximum supply voltage, the ISL84684 5.5V
maximum supply voltage provides plenty of room for the
10% tolerance of 4.3V supplies, as well as room for
overshoot and noise spikes.
The minimum recommended supply voltage is 1.65V. It is
important to note that the input signal range, switching times,
and ON-resistance degrade at lower supply voltages. Refer
to the “Electrical Specification” tables on page 2 and “Typical
Performance Curves” on page 9 for details.
V+ and GND also power the internal logic and level shiftiers.
The level shiftiers convert the input logic levels to switched
V+ and GND signals to drive the analog switch gate
terminals.
This family of switches cannot be operated with bipolar
supplies because the input switching point becomes
negative in this configuration.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V)
over a supply range of 2.7V to 4.5V (see Figure 18). At 2.7V,
the V
IL
level is about 0.53V. This is still above the 1.8V
CMOS guaranteed low output minimum level of 0.5V, but
noise margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
GND
V
COM
V
NX
V+
IN
X
OPTIONAL
PROTECTION
RESISTOR
OPTIONAL
SCHOTTKY
DIODE
OPTIONAL
SCHOTTKY
DIODE
FIGURE 9. OVERVOLTAGE PROTECTION
ISL84684
8
FN6088.5
July 31, 2007
High-Frequency Performance
In 50Ω systems, the ISL84684 has a -3dB bandwidth of
120MHz (see Figure 19). The frequency response is very
consistent over a wide V+ range and for varying analog
signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output. Off isolation is
the resistance to this feedthrough, while crosstalk indicates
the amount of feedthrough from one switch to another.
Figure 20 details the high off Isolation and crosstalk rejection
provided by this part. At 100kHz, off isolation is about 62dB
in 50Ω systems, decreasing approximately 20dB per decade
as frequency increases. Higher load impedances decrease
off isolation and crosstalk rejection due to the voltage divider
action of the switch OFF impedance and the load
impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND. One of
these diodes conducts if any analog signal exceeds V+ or
GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the
analog-signal-path leakage current. All analog leakage
current flows between each pin and one of the supply
terminals, not to the other switch terminal. This is why both
sides of a given switch can show leakage currents of the
same or opposite polarity. There is no connection between
the analog signal paths and V+ or GND.
ISL84684
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FN6088.5
July 31, 2007
trytyrtyryryeeyrteff
Typical Performance Curves T
A
= +25°C, Unless Otherwise Specified
FIGURE 10. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 11. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 12. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 13. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 14. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 15. CHARGE INJECTION vs SWITCH VOLTAGE
r
ON
(Ω)
V
COM
(V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
COM
= 100mA
0.28
0.29
0.30
0.31
0.32
0.33
0.34
0.35
V+ = 3.3V
V+ = 3V
V+ = 2.7V
00.51.01.52.0
r
ON
(Ω)
V
COM
(V)
I
COM
= 100mA
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
V+ = 2V
V+ = 1.65V
V+ = 1.8V
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
r
ON
(Ω)
V
COM
(V)
+85°C
-40°C
V+ = 3.3V
I
COM
= 100mA
+25°C
0.20
0.25
0.30
0.35
0.40
0 0.5 1.0 1.5 2.0 2.5 3.0
r
ON
(Ω)
V
COM
(V)
+85°C
-40°C
V+ = 2.7V
+25°C
I
COM
= 100mA
0.25
0.30
0.35
0.40
00.51.01.52.0
r
ON
(Ω)
V
COM
(V)
+85°C
-40°C
V+ = 1.8V
I
COM
= 100mA
+25°C
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
Q (pC)
V
COM
(V)
012345
-100
-50
0
50
100
150
200
V+ = 3V
V+ = 1.8V
V+ = 4.3V
ISL84684

ISL84684IUZ-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Analog Switch ICs W/ANNEAL SWITCH DL 4OHM S 1 65V 3 6V
Lifecycle:
New from this manufacturer.
Delivery:
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