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SI4816BDY-T1-GE3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Vishay Siliconix
Si4816BDY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
1
2
3
4
5
6
0246810
V
DS
= 15 V
I
D
= 6.8 A
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
= 150 °C
40
10
1
V
SD
– Source-to-Drain Voltage (V)
– Source Current (A)I
S
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
– Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 6.8 A
T
J
– Junction Temperature (°C)
R
DS(on)
– On-Resistance
(Normalized)
0.00
0.01
0.02
0.03
0.04
0.05
0246810
V
GS
– Gate-to-Source Voltage (V)
I
D
= 6.8 A
– On-Resistance (Ω)
R
DS(on)
0.001
0
1
100
40
60
10 0.1
Time (s)
20
80
Power (W)
0.01
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4816BDY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
C
= 25 °C
Single Pulse
– Drain Current (A)I
D
0.1
I
DM
Limited
I
D(on)
Limited
BVDSS Limited
1 ms
10 ms
100 ms
1 s
*
DS(on)
Limited by R
V
DS
–
>
Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
DC
10 s
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
0.1
0.01
10
-
4
10
-
3
10
-
2
10
-
1
1 10 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
100
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-
3
10
-
2
11010
-
1
10
-
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
www.vishay.com
6
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
Vishay Siliconix
Si4816BDY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
012345
V
GS
= 10 thru 5 V
3 V
V
DS
– Drain-to-Source Voltage (V)
– Drain Current (A)I
D
2 V
4 V
0.000
0.004
0.008
0.012
0.016
0.020
0 5 10 15 20 25 30
V
GS
= 4.5 V
V
GS
= 10 V
– On-Resistance (Ω)R
DS(on)
I
D
– Drain Current (A)
0
1
2
3
4
5
6
0 3 6 9 12 15
V
DS
= 15 V
I
D
= 9.5 A
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
8
16
24
32
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
– Gate-to-Source Voltage (V)
– Drain Current (A)I
D
0
400
800
1200
1600
2000
0 6 12 18 24 30
C
rss
C
oss
C
iss
V
DS
– Drain-to-Source Voltage (V)
C – Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 9.5 A
T
J
– Junction Temperature (°C)
R
DS(on)
– On-Resistance
(Normalized)
P1-P3P4-P6P7-P9P10-P12

SI4816BDY-T1-GE3

Mfr. #:
Buy SI4816BDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
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