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RJP60V0DPM-00#T1

P1-P3P4-P6P7-P8
R07DS0669EJ0200 Rev.2.00 Page 1 of 7
Apr 02, 2014
Preliminary Datasheet
RJP60V0DPM
600V - 22A - IGBT
Application: Inverter
Features
• High breakdown-voltage
• Low Collector to Emitter saturation Voltage
V
CE(sat)
= 1.5 V typ. (at I
C
= 22 A, V
GE
= 15 V, Ta = 25°C)
• Short circuit withstand time (6 μs typ.)
• Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
1
2
3
1. Gate
2. Collecto
r
3. Emitter
C
G
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage / diode reverse voltage V
CES
/ V
R
600 V
Gate to emitter voltage V
GES
±30 V
Collector current Tc = 25°C I
C
45 A
Tc = 100°C I
C
22 A
Collector peak current I
C(peak)
Note1
90 A
Collector dissipation P
C
Note2
40 W
Junction to case thermal impedance θj-c
Note2
3.125 °C/ W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
R07DS0669EJ0200
Rev.2.00
A
pr 02, 2014
RJP60V0DPM Preliminary
R07DS0669EJ0200 Rev.2.00 Page 2 of 7
Apr 02, 2014
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
— — 1 μA V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
— — ±1 μA V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
5.5 — 7.5 V V
CE
= 10 V, I
C
= 1 mA
Collector to emitter saturation voltage V
CE(sat)
— 1.5 2.1 V I
C
= 22 A, V
GE
= 15 V
Note3
V
CE(sat)
— 1.9 — V I
C
= 45 A, V
GE
= 15 V
Note3
Input capacitance Cies — 1080 — pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Output capacitance Coes — 58 — pF
Reveres transfer capacitance Cres — 42 — pF
Total gate charge Qg — 75 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 22 A
Gate to emitter charge Qge — 10 — nC
Gate to collector charge Qgc — 45 — nC
Switching time t
d(on)
— 45 — ns
V
CE
= 300 V , V
GE
= 15 V
I
C
= 22 A
Rg = 5 Ω
Inductive load
t
r
— 40 — ns
t
d(off)
— 100 — ns
t
f
— 70 — ns
Short circuit withstand time t
sc
— 6 — μs
V
CC
≤ 360 V , V
GE
= 15 V
Tc = 100 °C
Notes: 3. Pulse test.
RJP60V0DPM Preliminary
R07DS0669EJ0200 Rev.2.00 Page 3 of 7
Apr 02, 2014
Main Characteristics
100
80
60
40
0
20
Typical Output Characteristics
12345
Collector Current I
C
(A)
0
Collector to Emitter Voltage V
CE
(V)
V
GE
= 8 V
12 V
13 V
14 V15 V
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Maximum Safe Operation Area
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Turn-off Safe Operation Area
50
40
30
20
0
10
1 10010
1000
Tc = 25°C
Single pulse
Ta = 25
°
C
Pulse Test
11 V
10 V
9 V
1000
100
1
10
0.1
0.01
1 10010 1000
Tc = 25°C
Single pulse
100 μs
PW = 10 μs
100
80
60
40
0
20
Typical Output Characteristics
12345
Collector Current I
C
(A)
0
Collector to Emitter Voltage V
CE
(V)
V
GE
= 8 V
12 V
13 V
14 V
15 V
Ta = 150
°
C
Pulse Test
11 V
10 V
9 V
6
5
4
3
1
2
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
10 12 168142018
Ta = 25
°
C
Pulse Test
I
C
= 45 A
22 A
6
5
4
3
1
2
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
10 12 168142018
Ta = 150
°
C
Pulse Test
I
C
= 45 A
22 A
P1-P3P4-P6P7-P8

RJP60V0DPM-00#T1

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Buy RJP60V0DPM-00#T1
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors Power Module - Lead Free
Lifecycle:
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