RJP60V0DPM Preliminary
R07DS0669EJ0200 Rev.2.00 Page 4 of 7
Apr 02, 2014
Capacitance C (pF)
1
10
100
10000
1000
010050 150 200 250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80
100
V
GE
V
CE
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
I
C
= 22 A
Ta = 25
°
C
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25 0 25 75 12550 100 150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Junction Temparature Tj (
°
C)
0
2
1
3
4
V
GE
= 15 V
Pulse Test
I
C
= 45 A
22 A
3 A
100
80
60
40
20
0
481216610
14
Typical Transfer Characteristics
Collector Current I
C
(A)
Gate to Emitter Voltage V
GE
(V)
V
CE
= 10 V
Pulse Test
25°C
75°C
125°C
Tc = –25°C
V
CC
= 400 V
300 V
V
CC
= 400 V
300 V
0
6
4
2
8
10
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
−25 0 25 75 12550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Junction Temparature Tj (
°
C)
1 mA
I
C
= 10 mA
