IRF7304PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 V V
GS
= 0V, ID = -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient -0.012 V/°C Reference to 25°C, I
D
= -1mA
0.090 V
GS
= -4.5V, I
D
= -2.2A
0.140 V
GS
= -2.7V, I
D
= -1.8A
V
GS(th)
Gate Threshold Voltage -0.70 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 4.0 S V
DS
= -16V, I
D
= -2.2A
-1.0 V
DS
= -16V, V
GS
= 0V
-25 V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage -100 V
GS
= -12V
Gate-to-Source Reverse Leakage 100 V
GS
= 12V
Q
g
Total Gate Charge 22 I
D
= -2.2A
Q
gs
Gate-to-Source Charge 3.3 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge 9.0 V
GS
= -4.5V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time 8.4 V
DD
= -10V
t
r
Rise Time 26 I
D
= -2.2A
t
d(off)
Turn-Off Delay Time 51 R
G
= 6.0Ω
t
f
Fall Time 33 R
D
= 4.5Ω, See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance 610 V
GS
= 0V
C
oss
Output Capacitance 310 pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage -1.0 V T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time 56 84 ns T
J
= 25°C, I
F
= -2.2A
Q
rr
Reverse RecoveryCharge 71 110 nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -2.2A, di/dt ≤− 50A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-17
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance 6.0
L
D
Internal Drain Inductance 4.0
nH
ns
nA
µA
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
S
D
G
