IRF7304PbF
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
500
1000
1500
1 10 100
C, Capacitance (pF)
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
G
GS
FOR TEST CIRCUIT
SEE FIGURE 12
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.2A
V = -16V
D
DS
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
1ms
10ms
