© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
NPN Silicon Phototransistor
OP550, OP552, OP555, OP560, OP565,
OP750, OP755 Series
Issue A 08/2016 Page 4
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Electrical Specifications
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
I
C(ON)
On-State Collector Current
OP550A, OP552A, OP555A
OP550B, OP552B, OP555B
OP550C, OP552C, OP555C
OP550D, OP552D, OP555D
2.55
1.30
0.25
0.25
-
-
-
-
-
4.70
2.40
-
mA
V
CE
= 5.0 V, E
E
= 1.0 mW/cm
2(3)
OP560A, OP565A
OP560B, OP565B
OP560C, OP565C
6.6
3.3
1.1
-
-
-
-
9.8
-
V
CE
= 2.0 V, E
E
= 0.1 mW/cm
2(3)
OP750A
OP750B
OP750C
OP750D
2.25
1.50
0.85
0.85
-
-
-
-
7.00
4.20
2.80
7.00
OP755A
OP755B
OP755C
OP755D
1.80
1.20
0.70
0.70
-
-
-
-
5.50
3.40
2.25
5.50
OP770A
OP770B
OP770C
OP770D
2.25
1.50
0.85
0.85
-
-
-
-
7.00
4.20
2.80
7.00
OP775A
OP775B
OP775C
OP775D
1.80
1.20
0.70
0.70
-
-
-
-
5.50
3.40
2.25
5.50
I
C
/ѐ T RelaƟve I
C
Charge with Temperature - 1.00 - %/°C V
CE
= 5.0 V, E
E
= 1.0 mW/cm
2
,
ʄ = 935 nm
I
CEO
Collector-Dark Current - - 100 nA V
CE
= 10.0 V, E
E
= 0
(4)
V
(BR)CEO
Collector-EmiƩer Breakdown Voltage
OP550, OP552, OP555, OP750, OP755,
OP770, OP775
OP560, OP565
30
15
-
-
-
-
V
I
C
= 100 μA, E
E
= 0
(4)
I
C
= 1 mA, E
E
= 0
(4)
V
CE
= 5.0 V, E
E
= 1.0 mW/cm
2(3)
V
(BR)ECO
EmiƩer-Collector Breakdown Voltage 5.0 - - V I
E
= 100 μA
V
CE(SAT)
Collector-EmiƩer SaturaƟon Voltage
OP550, OP552, OP555, OP750, OP755,
OP770, OP775
OP560, OP565
-
-
-
-
0.40
1.10
V
I
C
= 100 μA, E
E
= 1.0 mW/cm
2(3)
I
C
= 0.4 mA, E
E
= 0.1 mW/cm
2(3)
See page 2 for Notes
