APT200GN60JDQ4 Datasheet APT200GN60J, APT200GN60JDQ4, APT200GN60JDQ4G | P1-P3

050-7610 Rev B 11-2005

APT200GN60JTYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 4mA)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 3.2mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 200A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 200A, T

j

= 125°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Intergrated Gate Resistor

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

R

GINT

UNIT

Volts

µA

nA

Ω

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

APT200GN60J

600

±20

283

158

600

600A @600V

682

-55 to 175

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

Switching Safe Operating Area @ T

J

= 175°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

600

5 5.8 6.5

1.05 1.45 1.85

1.65

1.15

1.19

25

TBD

600

2

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low V

CE(ON)

and are ideal for low frequency applications that require absolute minimum

conduction loss. Easy paralleling is a result of very tight parameter distribution and

a slightly positive V

CE(ON)

temperature coefﬁcient. A built-in gate resistor ensures

extremely reliable operation, even in the event of a short circuit fault. Low gate charge

simpliﬁes gate drive design and minimizes losses

• 600V Field Stop

• Trench Gate: Low V

CE(on)

• Easy Paralleling

• 5µs Short Circuit Capability

• Intergrated Gate Resistor: Low EMI, High Reliability

• 175°C Rated

Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor

600V

APT200GN60J

®

G

C

E

S

O

T

-

2

7

ISOTOP

®

file # E145592

"UL Recognized"

G

E

C

050-7610 Rev B 11-2005

APT200GN60J

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

Volts

oz

gm

Ib•in

N•m

MIN TYP MAX

.22

N/A

2500

1.03

29.2

10

1.1

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.)

Package Weight

Maximum Terminal & Mounting Torque

Symbol

R

θ

JC

R

θ

JC

V

Isolation

W

T

Torque

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

SCSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 300V

I

C

= 100A

T

J

= 175°C, R

G

= 1.0Ω

7

, V

GE

=

15V, L = 100µH, V

CE

= 600V

V

CC

= 360V, V

GE

= 15V,

T

J

= 150°C, R

G

= 1.0Ω

7

Inductive Switching (25°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 200A

R

G

= 1.0Ω

7

T

J

= +25°C

Inductive Switching (125°C)

V

CC

=400V

V

GE

= 15V

I

C

= 200A

R

G

= 1.0Ω

7

T

J

= +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Short Circuit Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

55

Turn-off Switching Energy

66

MIN TYP MAX

14100

4610

4000

8.2

1180

85

660

600

5

50

80

560

100

13

15

11

50

80

620

70

14

16

10

UNIT

pF

V

nC

A

µs

ns

mJ

ns

mJ

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2

For Combi devices, I

ces

includes both IGBT and FRED leakages

3

See MIL-STD-750 Method 3471.

4

E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode.

5

E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6

E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 R

G

is external gate resistance, not including R

G(int)

nor gate driver impedance. (MIC4452)

APT Reserves the right to change, without notice, the speciﬁcations and information contained herein.

050-7610 Rev B 11-2005

APT200GN60JTYPICAL PERFORMANCE CURVES

V

GS(TH)

, THRESHOLD VOLTAGE V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

(NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

250µs PULSE

TEST<0.5 % DUTY

CYCLE

400

350

300

250

200

150

100

50

0

400

350

300

250

200

150

100

50

0

3.0

2.5

2.0

1.5

1.0

0.5

0

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30

0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 1400

8 10 12 14 16 0 25 50 75 100 125 150 175

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 175

400

350

300

250

200

150

100

50

0

16

14

12

10

8

6

4

2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

400

350

300

250

200

150

100

50

0

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T

J

= 25°C) FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

15V

7.5V

7V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

T

J

= 175°C

V

GE

= 15V

9V

V

CE

= 300V

V

CE

= 120V

I

C

= 200A

T

J

= 25°C

V

CE

= 480V

T

J

= 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 300A

I

C

= 150A

I

C

= 75A

I

C

= 300A

I

C

= 150A

I

C

= 75A

T

J

= 175°C

13V

12V

8.5V

8V

APT200GN60JDQ4

APT200GN60JDQ4

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