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APT200GN60JDQ4

P1-P3P4-P6
050-7610 Rev B 11-2005
APT200GN60J
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 1.0Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 400V
T
J
= 25°C, or 125°C
R
G
= 1.0Ω
L = 100µH
60
50
40
30
20
10
0
180
160
140
120
100
80
60
40
20
0
35,000
30,000
25,000
20,000
15,000
10,000
5,000
0
70,000
60,000
50,000
40,000
30,000
20,000
10,000
0
800
700
600
500
400
300
200
100
0
250
200
150
100
50
0
25,000
20,000
15,000
10,000
5,000
0
35,000
30,000
25,000
20,000
15,000
10,000
5,000
0
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0Ω
40 80 120 160 200 240 280 320 40 80 120 160 200 240 280 320
40 80 120 160 200 240 280 320 40 80 120 160 200 240 280 320
40 80 120 160 200 240 280 320 40 80 120 160 200 240 280 320
0 5 10 15 20 0 25 50 75 100 125
R
G
= 1.0Ω, L = 100µH, V
CE
= 400V
R
G
= 1.0Ω, L = 100µH, V
CE
= 400V
T
J
= 25 or 125°C,V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
300A
E
off,
300A
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
300A
E
off,
300A
E
on2,
200A
E
off,
100A
E
on2,
100A
E
off,
200A
050-7610 Rev B 11-2005
APT200GN60JTYPICAL PERFORMANCE CURVES
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
20,000
10,000
5000
1000
500
100
700
600
500
400
300
200
100
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 100 200 300 400 500 600 700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
40 60 80 100 120 140 160 180 200
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 400V
R
G
= 1.0Ω
60
10
1
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
C
0es
C
res
C
ies
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
0.0463
0.132
0.0414
0.0120
0.483
8.30
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
050-7610 Rev B 11-2005
APT200GN60J
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT100DQ60
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
P1-P3P4-P6

APT200GN60JDQ4

Mfr. #:
Buy APT200GN60JDQ4
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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