TLP185
3 2017-04-27
Absolute Maximum Ratings
(Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≤ 100 μs, f = 100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage V
CC
― 5 48 V
Forward current I
F
― 16 20 mA
Collector current I
C
― 1 10 mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic Symbol Rating Unit
LED
Forward current I
F
50 mA
Forward current derating (Ta ≥ 90°C) ΔI
F
/°C -1.5 mA/°C
Pulse forward current (Note 1) I
FP
1 A
Reverse voltage V
R
5 V
Diode power dissipation
P
D
100 mW
Diode power dissipation derating (Ta >90°C)
P
D
/°C -2.9 mW/°C
Junction temperature T
j
125 °C
Detector
Collector-emitter voltage V
CEO
80 V
Emitter-collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Collector power dissipation derating (Ta ≥ 25°C) ΔP
C
/°C -1.5 mW/°C
Junction temperature T
j
125 °C
Operating temperature range T
opr
-55 to 110 °C
Storage temperature range T
stg
-55 to 125 °C
Lead soldering temperature (10 s) T
sol
260 °C
Total package power dissipation P
T
200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔP
T
/°C -2.0 mW/°C
Isolation voltage (AC, 60 s, R.H. ≤ 60%) (Note 2) BV
S
3750
Vrms
