HAF1002(L), HAF1002(S)
Rev.2.00 Sep 07, 2005 page 3 of 8
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
I
D1
–7 — — A V
GS
= –3.5 V, V
DS
= –2 V Drain current
I
D2
— — –10 mA V
GS
= –1.2 V, V
DS
= –2 V
Drain to source breakdown voltage V
(BR) DSS
–60 — — V I
D
= –10 mA, V
GS
= 0
V
(BR) GSS
–16 — — V I
G
= –100 µA, V
DS
= 0 Gate to source breakdown voltage
V
(BR) GSS
3 — — V I
G
= 100 µA, V
DS
= 0
I
GSS1
— — –100 µA V
GS
= –8 V, V
DS
= 0
I
GSS2
— — –50 µA V
GS
= –3.5 V, V
DS
= 0
I
GSS3
— — –1 µA V
GS
= –1.2 V, V
DS
= 0
Gate to source leak current
I
GSS4
— — 100 µA V
GS
= 2.4 V, V
DS
= 0
I
GS (op) 1
— –0.8 — mA V
GS
= –8 V, V
DS
= 0 Input current (shut down)
I
GS (op) 2
— –0.35 — mA V
GS
= –3.5 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — –250 µA V
DS
= –50 V, V
GS
= 0
Gate to source cutoff voltage V
GS (off)
–1.1 — –2.25 V I
D
= –1 mA, V
DS
= –10 V
R
DS (on)
— 100 130 mΩ I
D
= –7.5 A, V
GS
= –4 V
Note 3
Static drain to source on state resistance
R
DS (on)
— 70 90 mΩ I
D
= –7.5 A, V
GS
= –10 V
Note 3
Forward transfer admittance |y
fs
| 5 10 — S I
D
= –7.5 A, V
DS
= –10 V
Note 3
Output capacitance Coss — 610 — pF V
DS
= –10 V, V
GS
= 0
f = 1 MHz
Turn-on delay time t
d (on)
— 7.5 — µs
Rise time t
r
— 36 — µs
Turn-off delay time t
d (off)
— 32 — µs
Fall time t
f
— 29 — µs
I
D
= –7.5 A
V
GS
= –5 V
R
L
= 4 Ω
Body-drain diode forward voltage V
DF
— –1.0 — V I
F
= –15 A, V
GS
= 0
Body-drain diode reverse recovery time t
rr
— 200 — ns I
F
= –15 A, V
GS
= 0
di
F
/dt = 50 A/µs
t
os1
— 3.7 — ms V
GS
= –5 V, V
DD
= –12 V Over load shut down operation time
Note4
t
os2
— 1 — ms V
GS
= –5 V, V
DD
= –24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
