HAF1002(L), HAF1002(S)
Rev.2.00 Sep 07, 2005 page 5 of 8
0.20
0.16
0.12
0.08
0.04
–40 0 40 80 120 160
0
20
50
10
2
1
5
V
GS
= –4 V
–10 V
I
D
= –10 A
–2, –5 A
–5 A
–2 A
–10 A
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
0.5
Tc = –25°C
25°C
75°C
V
DS
= –10 V
Pulse Test
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Forward Transfer Admittance |y
fs
| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
–20
–16
–12
–8
–4
0
–0.40 –0.8 –1.2 –1.6 –2.0
V
GS
= –5 V
0 V
10000
1000
100
3000
300
0 –10 –20 –30 –40 –50
500
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
200
100
20
50
10
–50
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
2
1
0.5
–50
50
20
10
100
V
GS
= 0
f = 1 MHz
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
Drain Current I
D
(A)
Switching Time t (µs)
Switching Characteristics
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Capacitance Coss (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
t
f
t
r
t
d(on)
t
d(off)
V
GS
= –5 V, V
DD
= –30 V
PW = 300 µs, duty ≤ 1 %
