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N64S830HAS22IT

P1-P3P4-P6P7-P9P10-P12P13-P13
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 12
1 Publication Order Number:
N64S830HA/D
N64S830HA
64 kb Low Power Serial
SRAMs
8 k x 8 Bit Organization
Introduction
The ON Semiconductor serial SRAM family includes several
integrated memory devices including this 64 k serially accessed Static
Random Access Memory, internally organized as 8 k words by 8 bits.
The devices are designed and fabricated using ON Semiconductor’s
advanced CMOS technology to provide both high−speed performance
and low power. The devices operate with a single chip select (CS
)
input and use a simple Serial Peripheral Interface (SPI) serial bus. A
single data in and data out line is used along with a clock to access data
within the devices. The N64S830HA devices include a HOLD
pin that
allows communication to the device to be paused. While paused, input
transitions will be ignored. The devices can operate over a wide
temperature range of −40°C to +85°C and can be available in several
standard package offerings.
Features
• Power Supply Range: 2.5 to 3.6 V
• Very Low Standby Current: As low as 1 mA
• Very Low Operating Current: As low as 3 mA
• Simple Memory Control:
Single chip select (CS
)
Serial input (SI) and serial output (SO)
• Flexible Operating Modes:
Word read and write
Page mode (32 word page)
Burst mode (full array)
• Organization: 8 k x 8 bit
• Self Timed Write Cycles
• Built−in Write Protection (CS High)
• HOLD Pin for Pausing Communication
• High Reliability: Unlimited write cycles
• Green SOIC and TSSOP
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
Device Package
ORDERING INFORMATION
N64S830HAS22I SOIC−8
(Pb−Free)
Shipping
†
100 Units / Tube
N64S830HAT22I TSSOP−8
(Pb−Free)
100 Units / Tube
N64S830HAS22IT SOIC−8
(Pb−Free)
3000 / Tape &
Reel
N64S830HAT22IT TSSOP−8
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TSSOP−8
T SUFFIX
CASE 948AL
MARKING
DIAGRAMS
B125
XXXXYZZ
XXXX = Date Code
Y = Assembly Code
ZZ = Lot Traceability
SOIC−8
S SUFFIX
CASE 751BD
B115
XXXXYZZ
N64S830HA
http://onsemi.com
2
SO
NC
VSS
VCC
SCK
SI
CS
HOLD
VCC
SCK
SI
HOLD
SO
NC
VSS
CS
1
1
SOIC−8
TSSOP−8
Figure 1. Pin Connections
(Top View)
Table 1. DEVICE OPTIONS
Part Number Density
Power
Supply (V)
Speed (MHz) Package
Typical Standby
Current
Read/Write
Operating Current
N64S830HAS2
64 Kb 3.0 20
SOIC
1 mA
3 mA @ 1 Mhz
N64S830HAT2 TSSOP
Table 2. PIN NAMES
Pin Name Pin Function
CS Chip Select Input
SCK Serial Clock Input
SI Serial Data Input
SO Serial Data Output
HOLD Hold Input
NC No Connect
V
CC
Power
V
SS
Ground
64 Kb
SRAM
Array
Decode
Logic
Clock
Circuitry
SCK
Data In
Receiver
SDI
Data Out
Buffer
SDO
Figure 2. Functional Block Diagram
HOLD
CS
N64S830HA
http://onsemi.com
3
Table 3. ABSOLUTE MAXIMUM RATINGS
Item Symbol Rating Unit
Voltage on any pin relative to V
SS
V
IN,OUT
–0.3 to V
CC
+ 0.3 V
Voltage on V
CC
Supply Relative to V
SS
V
CC
–0.3 to 4.5 V
Power Dissipation P
D
500 mW
Storage Temperature T
STG
–40 to 125 °C
Operating Temperature T
A
−40 to +85 °C
Soldering Temperature and Time T
SOLDER
260°C, 10 sec °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Item Symbol Test Conditions Min
Typ
(Note 1)
Max Unit
Supply Voltage V
CC
3 V Device 2.5 3.6 V
Input High Voltage V
IH
0.7 x V
CC
V
CC
+ 0.3 V
Input Low Voltage V
IL
–0.3 0.8 V
Output High Voltage V
OH
I
OH
= −0.4 mA V
CC
– 0.5 V
Output Low Voltage V
OL
I
OL
= 1 mA 0.2 V
Input Leakage Current I
LI
CS = V
CC
, V
IN
= 0 to V
CC
0.5
mA
Output Leakage Current I
LO
CS = V
CC
, V
OUT
= 0 to V
CC
0.5
mA
Read/Write Operating
Current
I
CC1
F = 1 MHz, I
OUT
= 0 3 mA
I
CC2
F = 10 MHz, I
OUT
= 0 6 mA
I
CC3
F = fCLK MAX, I
OUT
= 0 10 mA
Standby Current I
SB
CS = V
CC
, V
IN
= V
SS
or V
CC
1 4
mA
1. Typical values are measured at Vcc = Vcc Typ., T
A
= 25°C and are not 100% tested.
Table 5. CAPACITANCE (Note 2)
Item
Symbol Test Condition Min Max Unit
Input Capacitance C
IN
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C 7 pF
I/O Capacitance C
I/O
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C 7 pF
2. These parameters are verified in device characterization and are not 100% tested
Table 6. TIMING TEST CONDITIONS
Item
Input Pulse Level 0.1 V
CC
to 0.9 V
CC
Input Rise and Fall Time 5 ns
Input and Output Timing Reference Levels 0.5 V
CC
Output Load CL = 100 pF
Operating Temperature −40 to +85°C
P1-P3P4-P6P7-P9P10-P12P13-P13

N64S830HAS22IT

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