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BUK7607-30B,118

P1-P3P4-P6P7-P9P10-P12P13-P15
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
[1] Continuous current is limited by package.
BUK7607-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --30V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 3
[1]
--75A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 --157W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C; see Figure 11;
see Figure 12
-5.97mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=75A; V
sup
≤ 30 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
--329mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
=24V; T
j
=25°C;
see Figure 13
-12-nC
BUK7607-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 21 February 2011 2 of 14
NXP Semiconductors
BUK7607-30B
N-channel TrenchMOS standard level FET
2. Pinning information
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT404 (D2PAK)
2 D drain
[1]
3Ssource
mb D mounting base; connected to drain
mb
13
2
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK7607-30B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK7607-30B,118

Mfr. #:
Buy BUK7607-30B,118
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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