BUK7607-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 21 February 2011 6 of 14
NXP Semiconductors
BUK7607-30B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V; T
j
=25°C30--V
I
D
= 0.25 mA; V
GS
=0V; T
j
= -55 °C 27 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 10
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
234V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--4.4V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=30V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=175°C;
see Figure 11; see Figure 12
- - 13.3 mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
-5.97mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=24V; V
GS
=10V;
T
j
= 25 °C; see Figure 13
-36-nC
Q
GS
gate-source charge - 9 - nC
Q
GD
gate-drain charge - 12 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
= 25 °C; see Figure 14
- 1820 2427 pF
C
oss
output capacitance - 632 758 pF
C
rss
reverse transfer capacitance - 256 351 pF
t
d(on)
turn-on delay time V
DS
=25V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-20-ns
t
r
rise time - 51 - ns
t
d(off)
turn-off delay time - 51 - ns
t
f
fall time - 44 - ns
L
D
internal drain inductance from drain lead 6 mm from package
to centre of die ; T
j
=25°C
-4.5-nH
from upper edge of drain mounting
base to centre of die ; T
j
=25°C
-2.5-nH
L
S
internal source inductance from source lead 6 mm from package
to source bond pad ; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=20V; T
j
=25°C
-46-ns
Q
r
recovered charge - 28 - nC
