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PTVA030121EA-V1-R0

P1-P3P4-P6P7-P9P10-P10
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-13
Thermally-Enhanced High Power RF LDMOS FET
12 W, 50 V, 390 – 450 MHz
Description
The PTVA030121EA is an LDMOS FET characterized for use in
power amplifier applications in the 390 MHz to 450 MHz frequency
band. Features include high gain and a thermally-enhanced package.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA030121EA
Package H-36265-2
Features
• Unmatched input and output
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• High gain, low thermal resistance
• Excellent ruggedness
• Capable of withstanding a 13:1 load mismatch at
50 V, 12 W, CW conditions
• Pb-free and RoHS compliant
RF Characteristics
CW Measurements
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 12 W, ƒ = 450 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 23 25 — dB
Drain Efficiency
h
D
66 69 — %
50
60
70
80
90
20
22
24
26
28
f
iciency (%)
n (dB)
CW Power Sweep
V
DD
= 50 V, I
DQ
= 30 mA, ƒ = 450 MHz
Gain
20
30
40
50
14
16
18
20
31 33 35 37 39 41 43
Drain Ef
f
Gai
Output Power (dBm)
Efficiency
3-1
PTVA030121EA
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 06, 2018-06-13
2
PTVA030121EA
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 1 mA V
(BR)DSS
105 — — V
Drain Leakage Current V
DS
= 50 V, V
GS
= 0 V I
DSS
— — 1.0 µA
V
DS
= 105 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 2.8 — W
Operating Gate Voltage V
DS
= 50 V, I
DQ
= 50 mA V
GS
— 3.6 — V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
105 V
Gate-Source Voltage V
GS
–6 to +12 V
Operating Voltage V
DD
0 to +55 V
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Thermal Resistance (T
CASE
70°C, 12 W CW) R
qJC
6.5 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping
PTVA030121EA V1 R0 PTVA030121EA-V1-R0 H-36265-2, bolt-down Tape & Reel, 50pcs
PTVA030121EA V1 R250 PTVA030121EA-V1-R250 H-36265-2, bolt-down Tape & Reel, 250pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 06, 2018-06-13
3
PTVA030121EA
50
60
70
80
22
26
30
34
f
iciency (%)
n (dB)
CW Power Sweep
V
DD
= 50 V, I
DQ
= 30 mA
Gain
450 MHz
420 MHz
390 MHz
20
30
40
10
14
18
31 33 35 37 39 41 43
Drain Ef
f
Gai
Output Power (dBm)
Efficiency
50
60
70
80
22
26
30
34
ciency (%)
n (dB)
CW Performance
IDQ = 30 mA, ƒ = 450 MHz, series show VDD
VDD = 50 V
V
DD = 40 V
V
DD = 30 V
Gain
20
30
40
10
14
18
30 32 34 36 38 40 42 44
Drain Effi
Gai
Output Power (W)
Efficiency
a030121 3.3
22
26
30
a
in (dB)
CW Performance, Gain
V
DD = 50 V, ƒ = 450 MHz, series show IDQ
30 mA
60 mA
14
18
32 34 36 38 40 42
G
a
Output Power (dBm)
IDQ = 0.5 mA
50
60
70
80
e
ncy (%)
CW Performance, Efficiency
VDD = 50 V, ƒ = 450 MHz, series show IDQ
IDQ = 60 mA
I
DQ = 30 mA
I
DQ = 0.5 mA
20
30
40
32 34 36 38 40 42
Effici
e
Output Power (dBm)
Typical Performance (data taken in a production test circuit)
P1-P3P4-P6P7-P9P10-P10

PTVA030121EA-V1-R0

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Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
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