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AS1110-BSST

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25
www.ams.com/LED-Driver-ICs/AS1110 Revision 1.6 3 - 24
AS1110
Datasheet - Absolute Maximum Ratings
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of
the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter Min Max Units Comments
V
DD to GND 0 7 V
Input Voltage -0.4
V
DD
+0.4
V
Output Voltage -0.4 15 V
GND Pin Current
2000 mA 24-pin SSOP package
2800 mA 28-pin QFN (5x5mm) package
Thermal Resistance Θ
JA
88 ºC/W on PCB, 24-pin SSOP package
23 ºC/W on PCB, 28-pin QFN (5x5mm) package
Ambient Temperature -40 +85 ºC
Storage Temperature -55 150 ºC
Humidity 5 86 % Non-condensing
Electrostatic Discharge
Digital Outputs 2
kV Norm: MIL 833 E method 3015
All Other Pins 2
Latch-Up Immunity
-100 -
(I
NOM x 0.5)
+100 +
I
NOM
mA EIA/JESD78
Package Body Temperature
+260 ºC
The reflow peak soldering temperature (body temperature)
specified is in accordance with IPC/JEDEC J-STD-020D
“Moisture/Reflow Sensitivity Classification for Non-
Hermetic Solid State Surface Mount Devices”.
The lead finish for Pb-free leaded packages is matte tin
(100% Sn).
Moisture Sensitivity
Level
SOIC 3 Represents a maximum floor life of 168h
QFN 1 Represents an infinite floor lifetime
www.ams.com/LED-Driver-ICs/AS1110 Revision 1.6 4 - 24
AS1110
Datasheet - Electrical Characteristics
6 Electrical Characteristics
VDD = +3.0V to +5.5V, TAMB = -40°C to +85ºC (unless otherwise specified).
Table 3. Electrical Characteristics
Symbol Parameter Condition Min Typ Max Unit
V
DD
Supply Voltage 3.0 5.5 V
V
DS
Output Voltage OUTN0:15 0 15.0 V
IOUT
Output Current
OUTN0:15, VDD = 5V (see Figure 7) 0.5 100
mA
I
OH
SDO -1.0
IOL
SDO 1.0
VIH
Input Voltage
High Level
CLK, OEN, LD, SDI
0.7 x
V
DD
VDD +
0.3
V
V
IL
Low Level -0.3
0.3 x
VDD
IDS(OFF)
Output Leakage Current OEN = 1, VDS = 15.0V 0.5 µA
VOL
Output
Voltage
SDO
I
OL = +1.0mA 0.4
V
V
OH
IOH = -1.0mA
VDD -
0.4V
IAV(LC1)
Device-to-Device Average Output Current
from OUTN0 to OUTN15
VDS = 0.5V, VDD = Const.,
REXT = 744Ω
24.5 26 mA
ΔI
AV(LC1)
Current Skew
(Between Channels)
VDS ≥ 0.5V, VDD = Const.,
R
EXT = 744Ω
±1 ±3 %
IAV(LC2)
Device-to-Device Average Output Current
from OUTN0 to OUTN15
VDS = 0.6V, VDD > 3.3V,
REXT = 372Ω
49.50 51.55 mA
ΔI
AV(LC2)
Current Skew
(Between Channels)
VDS ≥ 0.6V, VDD = Const,
R
EXT = 372Ω
±1 ±2 %
IAV(LC3)
Device-to-Device Average Output Current
from OUTN0 to OUTN15
VDS = 0.8V, VDD = 5.0V,
REXT = 186Ω
98 104 mA
ΔI
AV(LC3)
Current Skew
(Between Channels)
VDS ≥ 0.8V, VDD = Const.,
R
EXT = 186Ω
±1 ±2 %
ILC
Low-Current Diagnosis Mode VDS = 0.8V, VDD = 5.0V 0.4 0.6 0.8 mA
I
PD
Power Down Supply Current
VDS = 0.8V, VDD = 5.0V,
REXT = 372Ω, OUTN0:15 = On
10 20 µA
%/ΔV
DS
Output Current vs.
Output Voltage Regulation
VDS within 1.0 and 3.0V ±0.1 %/V
%/ΔV
DD
Output Current vs.
Supply Voltage Regulation
VDD within 3.0 and 5.0V ±1 %/V
R
IN(UP)
Pullup Resistance OEN 250 500 800 kΩ
R
IN(DOWN)
Pulldown Resistance LD 250 500 800 kΩ
V
THL
Error Detection Threshold Voltage 0.25 0.3 0.45 V
V
THH
Error Detection Threshold Voltage
V
DD = 3.0V 1.2 1.3 1.4
V
V
DD = 5.0V 2.0 2.2 2.4
T
OV1
Overtemperature Threshold Flag 150 ºC
www.ams.com/LED-Driver-ICs/AS1110 Revision 1.6 5 - 24
AS1110
Datasheet - Electrical Characteristics
6.1 Switching Characteristics
VDD = 3.0 to 5.5V, VDS = 0.8V, VIH = VDD, VIL = GND, REXT = 372Ω, VLOAD = 4.0V, RLOAD = 64Ω, CLOAD = 10pF; guaranteed by design.
I
DD(OFF)0
Supply Current
OFF
R
EXT = Open‚ OUTN0:15 = Off 2.7 6
mA
IDD(OFF)1
REXT = 744Ω‚ OUTN0:15 = Off 4.3 8
I
DD(OFF)2
REXT = 372Ω‚ OUTN0:15 = Off 5.4 9
I
DD(OFF)3
REXT = 186Ω, OUTN0:15 = Off 9.3 13
IDD(ON)1
ON
R
EXT = 744Ω‚ OUTN0:15 = On 6.2 11
IDD(ON)2
REXT = 372Ω‚ OUTN0:15 = On 10.5 15
I
DD(ON)3
REXT = 186Ω‚ OUTN0:15 = On 19.5 26
Table 4. Switching Characteristics for V
DD = 5V
Symbol Parameter Conditions Min Typ Max Unit
tP1
Propagation Delay Time
(Without Staggered Output Delay)
CLK - SDO 5 10
nst
P2 LD - OUTNn 100 200
tP3 OEN - OUTNn 100 200
tP4 Propagation Delay Time 10 ns
t
W(CLK)
Pulse Width
CLK 15
nstW(L) LD 15
tW(OE) OEN (@IOUT < 60mA) 200
tR
*
CLK Rise Time 500 ns
tF
*
CLK Fall Time 500 ns
t
OR Output Rise Time of VOUT (Turn Off) 100 200 ns
t
OF Output Fall Time of VOUT (Turn On) 100 300 ns
tSU(D) Setup Time for SDI 5 ns
tH(D) Hold Time for SDI 5 ns
t
SU(L) Setup Time for LD 5 ns
tH(L) Hold Time for LD 5 ns
t
TESTING OEN Time for Error Detection 2000 ns
t
STAG Staggered Output Delay 20 40 ns
tSU(OE) Output Enable Setup Time 20 ns
t
GSW(ERROR) Global Error Switching Setup Time 10 ns
t
SU(ERROR) Global Error Detection Setup Time 10 ns
tP(I/O) Propagation Delay Global Error Flag 5 ns
t
SW(ERROR) Switching Time Global Error Flag 10 ns
f
CLK
Maximum Clock Frequency
(Cascade Operation)
30 50 MHz
t
P3,ON
Low-Current Test Mode
Propagation Delay Time
Turn ON 3 5 µs
t
P3,OFF
Turn OFF 0.05 0.1 µs
Table 3. Electrical Characteristics (Continued)
Symbol Parameter Condition Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25

AS1110-BSST

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ams
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LED Display Drivers AS1110-BSST QSOP24 LF T&R
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