IRG4RC10KPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 19 29 I
C
= 5.0A
Q
ge
Gate - Emitter Charge (turn-on) — 2.9 4.3 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) — 9.8 15 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 11 —
t
r
Rise Time — 24 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 51 77 I
C
= 5.0A, V
CC
= 480V
t
f
Fall Time — 190 290 V
GE
= 15V, R
G
= 100Ω
E
on
Turn-On Switching Loss — 0.16 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 0.10 — mJ See Fig. 9,10,14
E
ts
Total Switching Loss — 0.26 0.32
t
sc
Short Circuit Withstand Time 10 — — µs V
CC
= 400V, T
J
= 125°C
V
GE
= 15V, R
G
= 100Ω , V
CPK
< 500V
t
d(on)
Turn-On Delay Time — 11 — T
J
= 150°C,
t
r
Rise Time — 27 — I
C
= 5.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 67 — V
GE
= 15V, R
G
= 100Ω
t
f
Fall Time — 350 — Energy losses include "tail"
E
ts
Total Switching Loss — 0.47 — mJ See Fig. 10,11,14
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 220 — V
GE
= 0V
C
oes
Output Capacitance — 29 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 7.5 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 — — V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C V
GE
= 0V, I
C
= 1.0mA
— 2.39 2.62 I
C
= 5.0A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 3.25 — I
C
= 9.0A See Fig.2, 5
— 2.63 — I
C
= 5.0A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.5 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -11 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 1.2 1.8 — S V
CE
= 50 V, I
C
= 5.0A
— — 250 V
GE
= 0V, V
CE
= 600V
— — 2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
— — 1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 100Ω,
(See fig. 13a)
