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IRG4RC10KPBF

P1-P3P4-P6P7-P9P10-P10
IRG4RC10KPbF
4 www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A10
C
I = A5
C
I = A2.5
C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
2
4
6
8
10
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
°
IRG4RC10KPbF
www.irf.com 5
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
10
C
I = A
5
C
I = A
2.5
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
100Ω
1 10 100
0
100
200
300
400
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
C
ies
C
oes
C
res
0 4 8 12 16 20
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 5.0A
CC
C
0 20 40 60 80 100
0.20
0.22
0.24
0.26
0.28
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 5A
CC
GE
J
C
°
( Ω )
IRG4RC10KPbF
6 www.irf.com
480V
4
X I
C
@25°C
D.U.T.
50V
L
V *
C
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V
R
L
=
5
0V
Driver*
1000V
D.U.T
.
I
C
C
V
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Fig. 11 - Typical Switching Losses vs.
Collector Current
Fig. 12 - Turn-Off SOA
100 Ω
1
10
100
1 10 100 100
V = 20V
T = 125 C
GE
J
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
P1-P3P4-P6P7-P9P10-P10

IRG4RC10KPBF

Mfr. #:
Buy IRG4RC10KPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V UltraFast 8-25kHz
Lifecycle:
New from this manufacturer.
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