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IXYH40N90C3

P1-P3P4-P6
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N90C3
V
CES
= 900V
I
C110
= 40A
V
CE(sat)
≤ ≤
≤ ≤
≤
2.5V
t
fi(typ)
= 110ns
DS100444A(02/13)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
G
C
E
Tab
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 950 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.5 5.5 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 25 μA
T
J
= 150°C 500 μA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 40A, V
GE
= 15V, Note 1 2.2 2.5 V
T
J
= 150°C 2.9 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 175°C 900 V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1MΩ 900 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 105 A
I
C110
T
C
= 110°C 40 A
I
CM
T
C
= 25°C, 1ms 200 A
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 5Ω I
CM
= 80 A
(RBSOA) Clamped Inductive Load @V
CE
≤ V
CES
P
C
T
C
= 25°C 600 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in.
Weight 6g
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Positive Thermal Coefficient of
Vce(sat)
z
International Standard Package
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
900V XPT
TM
IGBT
GenX3
TM
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N90C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
∅ P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 40A, V
CE
= 10V, Note 1 14 24 S
C
ie
s
2170 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 160 pF
C
res
40 pF
Q
g(on)
74 nC
Q
ge
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
18 nC
Q
gc
34 nC
t
d(on)
27 ns
t
ri
54 ns
E
on
1.9 mJ
t
d(off)
78 ns
t
fi
110 ns
E
of
f
1.0 1.7 mJ
t
d(on)
27 ns
t
ri
54 ns
E
on
2.7 mJ
t
d(off)
87 ns
t
fi
150 ns
E
off
1.2 mJ
R
thJC
0.25 °C/W
R
thCS
0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5Ω
Note 2
Inductive load, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5Ω
Note 2
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N90C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
7V
9V
10V
8V
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
12V
9V
13V
10V
7V
11V
14V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
9V
V
GE
= 15V
13V
12V
11V
10V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50-250 255075100125150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 80A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1
2
3
4
5
6
7
8
9
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 80
A
T
J
= 25ºC
40
A
20
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
P1-P3P4-P6

IXYH40N90C3

Mfr. #:
Buy IXYH40N90C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors GenX3 900V XPT IGBTs
Lifecycle:
New from this manufacturer.
Delivery:
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