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IXYH40N90C3
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N90C3
Fi
g. 7.
T
r
anscon
du
ctance
0
5
10
15
20
25
30
35
40
0
1
0
2
03
04
0
5
06
07
08
09
0
1
0
0
1
1
0
I
C
- A
m
pere
s
g
f s
-
Si
emens
T
J
= - 40
ºC
25ºC
150ºC
Fi
g.
10.
R
evers
e-Bi
as Saf
e Oper
ati
n
g Area
0
10
20
30
40
50
60
70
80
90
200
300
400
500
600
700
8
00
900
V
CE
- Vol
ts
I
C
- Amperes
T
J
= 150ºC
R
G
= 5
Ω
dv
/ d
t < 10
V
/ n
s
Fi
g.
11. M
axim
um
T
r
ansi
ent T
h
erm
al
Im
ped
ance
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Puls
e
W
i
dth -
Se
c
o
nds
Z
(th)JC
- ºC /
W
Fig. 8
. Ga
te Cha
rge
0
2
4
6
8
10
12
14
16
0
1
02
03
04
0
5
06
07
0
Q
G
-
N
a
no
C
o
ulo
mbs
V
GE
- Vol
t
s
V
CE
= 450V
I
C
= 40A
I
G
= 10m
A
Fig. 9. Ca
pac
ita
nce
10
100
1,0
00
10,000
0
5
10
15
20
25
30
35
40
V
CE
- V
ol
ts
Capacit
ance - P
i
coFarads
f
= 1 MH
z
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N90C3
Fig. 12
. Induct
iv
e Sw
itching E
nergy
Loss
vs
.
Gate R
esis
tance
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
5
1
01
5
2
02
53
0
R
G
- Oh
m
s
E
off
- M
illiJ
o
u
les
0
2
4
6
8
10
12
14
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 12
5
ºC
, V
GE
= 15V
V
CE
= 450V
I
C
= 40
A
I
C
= 80A
Fi
g
. 15.
I
nd
u
ctive T
u
rn
-o
ff Swi
tch
in
g
T
i
m
es vs.
Gate R
esis
tance
40
60
80
100
120
140
160
180
200
220
5
1
01
52
02
53
0
R
G
- Oh
m
s
t
f i
- Nanoseconds
40
60
80
100
120
140
160
180
200
220
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15
V
V
CE
= 4
50
V
I
C
= 80A
I
C
= 40A
Fi
g
. 13.
In
d
uct
ive Sw
itch
in
g
Ener
g
y Lo
ss vs.
Collect
or Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
20
30
40
50
60
70
80
I
C
- Am
p
eres
E
off
- M
illiJ
o
ule
s
0
1
2
3
4
5
6
7
8
E
on
- M
illiJ
o
ule
s
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15
V
V
CE
= 450V
T
J
= 25
º
C
T
J
= 125ºC
Fi
g
. 14.
In
d
uct
ive Sw
itch
in
g
Ener
g
y Lo
ss vs.
Jun
cti
on
T
em
p
erat
ur
e
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
25
50
75
10
0
125
T
J
-
D
e
gr
e
e
s
C
e
nti
gr
a
de
E
off
- M
illiJ
o
u
le
s
0
1
2
3
4
5
6
7
8
9
10
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15
V
V
CE
= 4
50
V
I
C
= 40
A
I
C
= 80
A
Fig. 16
. Induct
ive
T
urn-off
S
witc
h
ing T
im
es v
s.
Collec
tor
Current
0
50
100
150
200
250
300
20
30
40
50
60
70
80
I
C
- A
m
pe
res
t
f i
- Nanoseconds
0
30
60
90
120
150
180
t
d(off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
Ω
, V
GE
= 15
V
V
CE
= 4
50
V
T
J
= 125ºC
T
J
= 25
º
C
Fi
g.
17.
I
n
du
cti
ve T
ur
n-
off
Switch
i
ng
T
im
es vs.
Junct
ion T
em
perat
ure
20
40
60
80
100
120
140
160
180
200
25
50
75
100
125
T
J
- Deg
r
ees Cen
tig
rad
e
t
f i
- Nanoseconds
55
60
65
70
75
80
85
90
95
100
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
Ω
, V
GE
= 15
V
V
CE
= 450V
I
C
= 40A
I
C
= 80
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N90C3
IXYS REF: IXY_40N90C3D1(5D) 02-03-12
Fig. 1
9. Induc
tiv
e T
urn-on Sw
itching Tim
es v
s.
Collec
t
or Curre
nt
0
40
80
120
160
200
20
30
40
50
60
70
80
I
C
- A
m
peres
t
r i
- Nanoseconds
0
10
20
30
40
50
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 450V
25ºC
≤
T
J
≤
125ºC
Fig. 20
. Inductiv
e T
urn-on Swit
ching Tim
es v
s.
Junc
tion T
em
perat
ure
0
40
80
120
160
200
240
25
50
75
10
0
125
T
J
-
D
e
g
r
e
e
s
C
e
nt
i
gr
a
de
t
r i
- Nanoseconds
24
26
28
30
32
34
36
t
d
(
on
)
- Nan
ose
con
ds
t
r i
t
d(on)
- - - -
R
G
= 5
Ω
, V
GE
= 15
V
V
CE
= 45
0
V
I
C
= 80A
I
C
= 40A
Fig. 18
. Inductiv
e Turn-on Swit
ching T
im
es vs
.
Gate R
esist
ance
0
40
80
120
160
200
240
280
5
1
01
5
2
02
5
3
0
R
G
- Oh
m
s
t
r i
- Nanoseconds
10
20
30
40
50
60
70
80
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 45
0V
I
C
= 40A
I
C
= 80A
P1-P3
P4-P6
IXYH40N90C3
Mfr. #:
Buy IXYH40N90C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors GenX3 900V XPT IGBTs
Lifecycle:
New from this manufacturer.
Delivery:
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IXYH40N90C3