NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX656 ZTX657 UNIT
Collector-Base Voltage V
CBO
200 300 V
Collector-Emitter Voltage V
CEO
200 300 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
0.5 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX656 ZTX657
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200 300 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
200 300 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
55V
I
E
=100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100 100 nA V
EB
=3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 0.5 V I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
11VI
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1 1 V IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
50
40
50
40
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
Transition
Frequency
f
T
30 30 MHz I
C
=10mA, V
CE
=20V
f=20MHz
E-Line
TO92 Compatible
ZTX656
ZTX657
3-227
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
1 100010 100
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
300µs
0.01
0.1
101
IC - Collector Current (Amps)
V
BE(sat)
v I
C
V
B
E
(sat)
-
(
V
o
lts
)
I
C
/I
B
=10
IC - Collector Current (Amps)
h
FE
v I
C
h
F
E
-
No
r
mal
ised
Ga
i
n
(
%
)
0.01
100.1 1
V
CE
=5V
0.01
100.1 1
0.6
0.8
1.0
1.2
I
C
/I
B
=10
0.4
IC - Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
-
(
V
olts
)
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
1.2
1.4
0
ts
µs
2
1
3
td
tr
tf
µs
0.6
0.4
0.2
0.8
1.0
40
60
80
100
20
0
0.01
100.1 1
0.6
0.8
1.0
1.2
0.4
V
CE
=5V
ZT
X
6
5
6
V
CE
=10V
0.4
0.6
0.8
1.0
0.2
0
1.4
1.6
1.2
1.8
0
ZT
X
65
7
ZTX656
ZTX657
3-228
