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NTLJS4114NTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 3
1 Publication Order Number:
NTLJS4114N/D
NTLJS4114N
Power MOSFET
30 V, 7.8 A, mCoolt Single N−Channel,
2x2 mm WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88
• Lowest R
DS(on)
in 2x2 mm Package
• 1.8 V R
DS(on)
Rating for Operation at Low Voltage Logic Level Gate
Drive
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• DC−DC Conversion
• Boost Circuits for LED Backlights
• Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• Low Side Load Switch for Noisy Environment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
6.0
A
T
A
= 85°C 4.4
t ≤ 5 s T
A
= 25°C 7.8
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.92
W
t ≤ 5 s 3.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
3.6
A
T
A
= 85°C 2.6
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.70 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
28 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
3.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
http://onsemi.com
30 V
45 mW @ 2.5 V
35 mW @ 4.5 V
R
DS(on)
MAX
7.8 A
I
D
MAX (Note 1)V
(BR)DSS
55 mW @ 1.8 V
G
S
N−CHANNEL MOSFET
D
JA = Specific Device Code
M = Date Code
G = Pb−Free Package
JA M G
G
1
2
3
6
5
4
WDFN6
CASE 506AP
STYLE 1
MARKING
DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
NTLJS4114NT1G WDFN6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
D
S
S
D
Pin 1
(Note: Microdot may be in either location)
NTLJS4114NTAG WDFN6
(Pb−Free)
3000/Tape & Reel
NTLJS4114N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
65
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
q
JA
38
Junction−to−Ambient – Steady State Min Pad (Note 4)
R
q
JA
180
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
2
, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, Ref to 25°C
20 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
DS
= 24 V, V
GS
= 0 V
T
J
= 25°C 1.0
mA
T
J
= 85°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.4 0.55 1.0 V
Negative Gate Threshold
Temperature Coefficient
V
GS(TH)
/T
J
3.18 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 2.0 A 20.3 35
mW
V
GS
= 2.5 V, I
D
= 2.0 A 25.8 45
V
GS
= 1.8 V, I
D
= 1.8 A 35.2 55
Forward Transconductance g
FS
V
DS
= 16 V, I
D
= 2.0 A 8 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
650
pF
Output Capacitance C
OSS
115.5
Reverse Transfer Capacitance C
RSS
70
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 2.0 A
8.5 13
nC
Threshold Gate Charge Q
G(TH)
0.6
Gate−to−Source Charge Q
GS
0.9
Gate−to−Drain Charge Q
GD
2.1
Gate Resistance R
G
3.0
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 2.0 A, R
G
= 3.0 W
5
ns
Rise Time t
r
9
Turn−Off Delay Time t
d(OFF)
20
Fall Time t
f
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
SD
V
GS
= 0 V, IS = 2.0 A
T
J
= 25°C 0.71 1.2
V
T
J
= 85°C 0.58
Reverse Recovery Time t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 1.0 A
14 35
ns
Charge Time t
a
8.0
Discharge Time t
b
6.0
Reverse Recovery Time Q
RR
5.0 nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLJS4114N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
1
0.05
32
0.03
0.01
0
46
1.6
1.2
1.4
1.0
0.8
0.6
1.0E−05
0621
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (A)
1.0
0.025
2.01.5
0.015
0.01
0.005
3.0
Figure 3. On−Resistance versus Drain Current
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (A)
7
−50 50250−25 75 125100
1
212104
3
1
2
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 1.8 V
V
GS
= 0 V
I
D
= 2 A
V
GS
= 4.5 V
3
0.03
T
J
= 125°C
T
J
= 150°C
2
0
8
1.5
T
J
= 25°C
30
V
GS
= 1.6 V to 8 V
1.5 V
34
4
0
4
0.02
0.02
T
J
= 25°C
150
1.0E−07
1.0E−04
2.5
1.4 V
1.3 V
1.2 V
T
J
= 25°C
V
GS
= 4.5 V
T
J
= −55°C
T
J
= 100°C
0.04
V
GS
= 4.5 V
V
GS
= 2.5 V
6 8 14 16 18
20.5
2.5
5
5
6
0.5 51.5 2.5 3.5 4.5 5.5
6
1.0E−06
0 2022242628
T
J
= 85°C
P1-P3P4-P6

NTLJS4114NTAG

Mfr. #:
Buy NTLJS4114NTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET WDFN6 30V 7.8A
Lifecycle:
New from this manufacturer.
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