IXGT72N60A3 Datasheet IXGT72N60A3, IXGH72N60A3 | P1-P3

GenX3

TM

600V IGBT

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C (limited by leads) 75 A

I

C110

T

C

= 110°C 72 A

I

CM

T

C

= 25°C, 1ms 400 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 3Ω I

CM

= 150 A

(RBSOA) Clamped inductive load @ ≤ 600V

P

C

T

C

= 25°C 540 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from case for 10s 300 °C

T

SOLD

Plastic body for 10 seconds 260 °C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

DS99759B(07/08)

IXGH72N60A3

IXGT72N60A3

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

75 μA

V

GE

= 0V T

J

= 125°C 750 μA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= 60A, V

GE

= 15V, Note 1 1.35 V

V

CES

= 600V

I

C110

= 72A

V

CE(sat)

≤≤

≤ 1.35V

t

fi(typ)

= 250ns

TO-247 (IXGH)

G

C

E

C (TAB)

TO-268 (IXGT)

G

E

C (TAB)

Ultra Low Vsat PT IGBT for

up to 5kHz switching

Features

z

Optimized for low conduction losses

z

Square RBSOA

z

International standard packages

Advantages

z

High power density

z

Low gate drive requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

z

Inrush Current Protection Circuits

IXYS reserves the right to change limits, test conditions and dimensions.

IXGH72N60A3

IXGT72N60A3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 48 76 S

C

ies

6600 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 360 pF

C

res

80 pF

Q

g

230 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 0.5 • V

CES

40 nC

Q

gc

78 nC

t

d(on)

31 ns

t

ri

34 ns

E

on

1.38 mJ

t

d(off)

320 ns

t

fi

250 ns

E

off

3.5 mJ

t

d(on)

29 ns

t

ri

32 ns

E

on

2.6 mJ

t

d(off)

510 ns

t

fi

375 ns

E

off

6.5 mJ

R

thJC

0.23 °C/W

R

thCS

0.15 °C/W

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

Terminals: 1 - Gate 2 - Drain

1 2 3

TO-268 Outline

Terminals: 1 - Gate 2 - Drain

Inductive load, T

J

= 25°C

I

C

= 50A, V

GE

= 15V

V

CE

= 480V, R

G

= 3Ω

Inductive load, T

J

= 125°C

I

C

= 50A, V

GE

= 15V

V

CE

= 480V, R

G

= 3Ω

IXGH72N60A3

IXGT72N60A3

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

330

012345678

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 120A

I

C

= 60A

I

C

= 30A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

56789101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 120A

60A

30A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGT72N60A3

IXGT72N60A3

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