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IXGT72N60A3

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH72N60A3
IXGT72N60A3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 60A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3
dV / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: G_72N60A3 (76)3-25-08-B
© 2008 IXYS CORPORATION, All rights reserved
IXGH72N60A3
IXGT72N60A3
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
220
240
260
280
300
320
340
360
380
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
220
260
300
340
380
420
460
500
540
580
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A, 50A, 100A
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
360
363
366
369
372
375
378
381
384
387
390
0 5 10 15 20 25 30 35
R
G
- Ohms
t
f
- Nanoseconds
400
500
600
700
800
900
1000
1100
1200
1300
1400
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0
2
4
6
8
10
12
14
16
18
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0.00
0.75
1.50
2.25
3.00
3.75
4.50
5.25
6.00
6.75
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0
2
4
6
8
10
12
14
16
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
2
3
4
5
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
220
240
260
280
300
320
340
360
380
400
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f
- Nanoseconds
250
290
330
370
410
450
490
530
570
610
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH72N60A3
IXGT72N60A3
IXYS REF: G_72N60A3 (76)3-25-08-B
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
10
20
30
40
50
60
70
80
90
100
110
120
0 5 10 15 20 25 30 35
R
G
- Ohms
t
r
- Nanoseconds
10
20
30
40
50
60
70
80
90
100
110
120
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
10
20
30
40
50
60
70
80
90
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r
- Nanoseconds
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
10
20
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
26
27
28
29
30
31
32
33
34
35
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3
Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A
I
C
= 50A
I
C
= 100A
P1-P3P4-P6

IXGT72N60A3

Mfr. #:
Buy IXGT72N60A3
Manufacturer:
Littelfuse
Description:
IGBT Modules GenX3 600V IGBTs
Lifecycle:
New from this manufacturer.
Delivery:
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