1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Input internally matched to 50
A gain of 23.2 dB at 250 MHz increasing to 24.3 dB at 2150 MHz
Output power at 1 dB gain compression = 4 dBm
Supply current = 17.4 mA at a supply voltage of 5 V
Reverse isolation > 32 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.8 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2866
MMIC wideband amplifier
Rev. 4 — 13 July 2015 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym052
1
3
2, 5
6
4
BGA2866 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 13 July 2015 2 of 18
NXP Semiconductors
BGA2866
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BGA2866 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2866 *ED * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 +7.0 V
I
CC
supply current - 36 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - +10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 5.0 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 5.0 5.5 V
I
CC
supply current 14.7 17.4 20.1 mA
BGA2866 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 13 July 2015 3 of 18
NXP Semiconductors
BGA2866
MMIC wideband amplifier
G
p
power gain f = 250 MHz 22.6 23.2 23.8 dB
f = 950 MHz 23.2 23.9 24.6 dB
f = 2150 MHz 22.8 24.3 25.8 dB
RL
in
input return loss f = 250 MHz 18 20 22 dB
f = 950 MHz 242628dB
f = 2150 MHz 11 18 24 dB
RL
out
output return loss f = 250 MHz 21 26 30 dB
f = 950 MHz 121314dB
f = 2150 MHz 10 11 14 dB
ISL isolation f = 250 MHz 40 60 81 dB
f = 950 MHz 414344dB
f = 2150 MHz 32 35 37 dB
NF noise figure f = 250 MHz 3.4 3.9 4.4 dB
f = 950 MHz 3.4 3.8 4.2 dB
f = 2150 MHz 3.5 3.9 4.3 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 3.1 3.3 3.4 GHz
K Rollett stability factor f = 250 MHz 33 35 37
f = 950 MHz 3.8 4.1 4.4
f = 2150 MHz 1.3 1.6 1.9
P
L(sat)
saturated output power f = 250 MHz 5 6 7 dBm
f = 950 MHz 5 7 8 dBm
f = 2150 MHz 2 4 5 dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 3 4 5 dBm
f = 950 MHz 3 4 5 dBm
f = 2150 MHz 1 3 4 dBm
IP3
I
input third-order intercept point P
drive
= 36 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 6 4 2dBm
f
1
= 950 MHz; f
2
= 951 MHz 9 7 4dBm
f
1
=2150MHz; f
2
=2151MHz 16 12 9dBm
IP3
O
output third-order intercept point P
drive
= 36 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 171921dBm
f
1
= 950 MHz; f
2
=951MHz 151720dBm
f
1
=2150MHz; f
2
=2151MHz 9 12 15 dBm
P
L(2H)
second harmonic output power P
drive
= 33 dBm
f
1H
= 250 MHz; f
2H
=500MHz 53 51 49 dBm
f
1H
= 950 MHz; f
2H
=1900MHz 43 41 40 dBm
IM2 second-order intermodulation distance P
drive
= 36 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 364758dBc
f
1
= 950 MHz; f
2
=951MHz 324355dBc
Table 6. Characteristics
…continued
V
CC
= 5.0 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2866,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 6CH MMIC Amp 3.9 dB 5V 17.4mA 3.3GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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