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BGA2866,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
BGA2866 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 13 July 2015 10 of 18
NXP Semiconductors
BGA2866
MMIC wideband amplifier
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
i(1dB)
input power at 1 dB gain compression f = 250 MHz
V
CC
=4.5V 18 18 19 dBm
V
CC
= 5.0 V 18 18 18 dBm
V
CC
=5.5V 17 18 18 dBm
f = 950 MHz
V
CC
=4.5V 19 19 19 dBm
V
CC
= 5.0 V 18 18 19 dBm
V
CC
=5.5V 18 18 18 dBm
f = 2150 MHz
V
CC
=4.5V 20 21 22 dBm
V
CC
= 5.0 V 20 21 22 dBm
V
CC
=5.5V 20 21 22 dBm
Table 10. Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
V
CC
=4.5V 4 3 3 dBm
V
CC
= 5.0 V 5 4 4 dBm
V
CC
=5.5V 5 5 4 dBm
f = 950 MHz
V
CC
=4.5V 4 3 3 dBm
V
CC
= 5.0 V 5 4 4 dBm
V
CC
=5.5V 6 5 4 dBm
f = 2150 MHz
V
CC
=4.5V 3 2 0 dBm
V
CC
= 5.0 V 4 2 1 dBm
V
CC
=5.5V 4 3 1 dBm
BGA2866 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 13 July 2015 11 of 18
NXP Semiconductors
BGA2866
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(sat)
saturated output power f = 250 MHz
V
CC
=4.5V 655dBm
V
CC
= 5.0 V 7 6 6 dBm
V
CC
=5.5V 876dBm
f = 950 MHz
V
CC
=4.5V 655dBm
V
CC
= 5.0 V 7 7 5 dBm
V
CC
=5.5V 876dBm
f = 2150 MHz
V
CC
=4.5V 432dBm
V
CC
= 5.0 V 5 4 2 dBm
V
CC
=5.5V 542dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IM2 second-order intermodulation distance f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
= 36 dBm
V
CC
=4.5V 404246dBc
V
CC
= 5.0 V 44 47 51 dBc
V
CC
=5.5V 485156dBc
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
= 36 dBm
V
CC
=4.5V 384043dBc
V
CC
= 5.0 V 42 43 45 dBc
V
CC
=5.5V 454646dBc
BGA2866 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 13 July 2015 12 of 18
NXP Semiconductors
BGA2866
MMIC wideband amplifier
Table 13. Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IP3
O
output third-order intercept point f
1
=250MHz;
f
2
=251MHz;
P
drive
= 36 dBm
V
CC
=4.5V 18 18 17 dBm
V
CC
= 5.0 V 20 19 18 dBm
V
CC
=5.5V 21 19 19 dBm
f
1
=950MHz;
f
2
=951MHz;
P
drive
= 36 dBm
V
CC
=4.5V 17 16 15 dBm
V
CC
= 5.0 V 18 17 16 dBm
V
CC
=5.5V 20 18 16 dBm
f
1
=2150MHz;
f
2
=2151MHz;
P
drive
= 36 dBm
V
CC
=4.5V 13 11 9 dBm
V
CC
= 5.0 V 14 12 9 dBm
V
CC
=5.5V 15 12 10 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
B
3dB
3 dB bandwidth V
CC
= 4.5 V 3.375 3.245 3.059 GHz
V
CC
= 5.0 V 3.399 3.265 3.069 GHz
V
CC
= 5.5 V 3.416 3.278 3.078 GHz
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BGA2866,115

Mfr. #:
Buy BGA2866,115
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 6CH MMIC Amp 3.9 dB 5V 17.4mA 3.3GHz
Lifecycle:
New from this manufacturer.
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