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STD01N

P1-P3P4-P6P7-P9
STD01N and STD01P
Description
The STD01N and STD01P are enhanced Darlington transistors
with built-in drivers and temperature compensation diode.
Manufactured using the unique Sanken thin-wafer production
technology, these devices achieve higher power levels through
decreased thermal resistance, and can withstand higher voltages
than similar devices on the market.
The temperature compensation diode is integrated on the same
chip as the power transistors. By this design, the STD01N and
STD01P eliminate delays that would otherwise be induced
between thermal sensing at the heat source, and the operation of
the compensation circuitry. Thus, these transistors are ideal for
applications where enhanced thermal stability is required.
This device is provided in a 5-pin TO-3P plastic package with
pin 4 removed. Contact Sanken™ for application support and
additional information on device performance.
Applications include:
▪ General amplifier applications
▪ Professional audio amplifiers
▪ Car audio amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes
▪ High power (100 W) handling in a small package
(TO-3P), for minimized heat sink requirements
▪ Built-in drivers and temperature compensation diodes,
reducing external component count and simplifying
circuit design
▪ NPN and PNP versions
▪ Emitter terminals placed symmetrically, pin 5 on NPN
and pin 1 on PNP models, allowing adjacent placement on
PCB to minimize trace length and output skew when used
in pairs
▪ Approved by major manufacturers
Darlington Transistors for Audio Amplifiers
Equivalent Circuits
Package: 5 pin TO-3P (MT-100)
Not to scale
Datasheet 28104.011
STD01N
3
5
1
2
STD01P
5
1
4
3
STD01N
1
2
3
4
5
STD01P
1
2
3
4
5
Emitter pins symmetrical
Darlington Transistors for Audio Amplifiers
STD01N and
STD01P
2
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature of +25°C, unless oth er wise stated.
ABSOLUTE MAXIMUM RATINGS at T
A
= 25°C
Characteristic Symbol Rating Unit
Collector-Base Voltage
1
V
CBO
150 V
Collector-Emitter Voltage
1
V
CEO
150 V
Emitter-Base Voltage
1
V
EBO
5V
Collector Current
1
I
C
10 A
Base Current
1
I
B
1A
Collector Power Dissipation
2
P
C
100 W
Diode Forward Current I
F
10 mA
Junction Temperature T
J
150 °C
Storage Temperature T
stg
–55 to150 °C
1
For PNP type (STD01P), voltage and current values are negative.
2
T
C
= 25°C.
SELECTION GUIDE
Part Number Type h
FE
Rating Packing
STD01N* NPN
Range O: 5000 to 12000
Bulk, 100 pieces
Range Y: 8000 to 20000
STD01P* PNP
Range O: 5000 to 12000
Range Y: 8000 to 20000
*Specify h
FE
range when ordering. If no h
FE
range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
ELECTRICAL CHARACTERISTICS at T
A
= 25°C
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Collector-Cutoff Current
1
I
CBO
V
CB
= 150 V – – 100 μA
Emitter Cutoff Current
1
I
EBO
V
EB
= 5 V – – 100 μA
Collector-Emitter Voltage
1
V
CEO
I
C
= 30 mA 150 – – V
DC Current Transfer Ratio
2,3
h
FE
V
CE
= 4 V, I
C
= 6 A 5000 – 20000 –
Collector-Emitter Saturation Voltage
1
V
CE(sat)
I
C
= 6 A, I
B
= 6 mA – – –2.0 V
Base-Emitter Saturation Voltage
1
V
BE(sat)
I
C
= 6 A, I
B
= 6 mA – – –2.5 V
Base-Emitter Voltage V
BE
STD01N V
CE
= 20 V, I
C
= 40 mA – 1220 – mV
STD01P V
CE
= –20 V, I
C
= –40 mA – 1230 – mV
Diode Forward Voltage V
F
STD01N I
F
= 2.5 mA – 705 – mV
STD01P I
F
= 2.5 mA – 1580 – mV
1
For PNP type (STD01P), voltage and current values are negative.
2
h
FE
rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y).
3
When the transistor is used in pairs, the following conditions must be satisfi ed: Total V
F
≤ Total V
BE
of the transistors (the above measurement
conditions shall be applied), and ∆V = 0 to 500 mV.
Darlington Transistors for Audio Amplifiers
STD01N and
STD01P
3
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
10
8
6
4
2
0
10
8
6
4
2
0
02 4 6
V
CE
(V)
I
C
(A)
0
1
2
3
0.0001 0.001 0.01 0.1 1
V
CE(sat)
(V)
6 A
8 A
I
C
=4 A
0 0.5 1.0 1.5 2.0 2.5
0.1 1 10 100
1
10
0 0.5 1.0 1.5 2.0
1 10 100 1000
0.01
0.10
1.00
10.00
110100
1000
P
C
vs. T
A
0
20
40
60
80
100
0 25 50 75 100 125 150
T
A
(°C)
P
C
(W)
With
out Heatsink
With InfiniteHe
atsink
3.5
I
C
vs. V
CE
V
CE(sat)
vs. I
B
h
FE
vs. I
C
I
C
vs. V
BE
R
θJA
vs. t
I
F
vs. V
F
For Diode
Safe Operating
Area
R
θJA
(°C/W)
10 mA
2.0mA
1.5 mA
1.0 mA
0.8 mA
0.5 mA
0.3 mA
125°C
25°C
–30°C
125°C
10 ms
DC
100 ms
25°C
–30°C
I
B
= 0.2 mA
I
C
(A)
V
CE
= 4 V Continuous
V
CE
= 4 V Continuous
Single pulse
No heatsink
Natural cooling
T
A
=25°
V
BE
(V)
I
F
(mA)
V
F
(V)
t(ms)
I
B
(A)
I
C
(A)
h
FE
10
2
10
3
10
4
10
5
10
6
0.01
0.1
1.0
10.0
100.0
V
CE
(V)
I
C
(A)
STD01N Performance Characteristics at T
A
= 25°C
P1-P3P4-P6P7-P9

STD01N

Mfr. #:
Buy STD01N
Manufacturer:
Description:
TRANS NPN DARL 150V 10A TO-3P-5
Lifecycle:
New from this manufacturer.
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