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2N4403RLRAG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1 Publication Order Number:
2N4403/D
2N4403
Preferred Device
General Purpose
Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
40 Vdc
Collector − Base Voltage V
CBO
40 Vdc
Emitter − Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
MARKING DIAGRAM
2N
4403
AYWW G
G
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
Preferred devices are recommended choices for future
use and best overall value.
2N4403 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
2N4403
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage (I
C
= 0.1 mAdc, I
E
= 0) V
(BR)CBO
40 − Vdc
Emitter−Base Breakdown Voltage (I
E
= 0.1 mAdc, I
C
= 0) V
(BR)EBO
5.0 − Vdc
Base Cutoff Current (V
CE
= 35 Vdc, V
EB
= 0.4 Vdc) I
BEV
− 0.1 mAdc
Collector Cutoff Current (V
CE
= 35 Vdc, V
EB
= 0.4 Vdc) I
CEX
− 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 2.0 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc) (Note 1)
h
FE
30
60
100
100
20
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 1) (I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.4
0.75
Vdc
Base−Emitter Saturation Voltage (Note 1) (I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.75
−
0.95
1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz) f
T
200 − MHz
Collector−Base Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
cb
− 8.5 pF
Emitter−Base Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
eb
− 30 pF
Input Impedance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
ie
1.5 k 15 k W
Voltage Feedback Ratio (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
re
0.1 8.0 X 10
−4
Small−Signal Current Gain (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
fe
60 500 −
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
oe
1.0 100 mmhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE
= +2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 15 ns
Rise Time t
r
− 20 ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= 15 mA, I
B2
= 15 mA)
t
s
− 225 ns
Fall Time t
f
− 30 ns
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Package Shipping
†
2N4403 TO−92 5000 Units / Bulk
2N4403G TO−92
(Pb−Free)
5000 Units / Bulk
2N4403RLRA TO−92 2000 / Tape & Reel
2N4403RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
2N4403RLRM TO−92 2000 / Ammo Pack
2N4403RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
2N4403RLRPG TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N4403
http://onsemi.com
3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
−16 V
10 to 100 ms,
DUTY CYCLE = 2%
0
1.0 kW
−30 V
200 W
C
S
* < 10 pF
1.0 kW
−30 V
200 W
C
S
* < 10 pF
+4.0 V
< 2 ns
1.0 to 100 ms,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
−16 V
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10 20
2.0
30
CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1
300 500
0.7
0.5
V
CC
= 30 V
I
C
/I
B
= 10
C
eb
Q
T
Q
A
25°C 100°C
TRANSIENT CHARACTERISTICS
3.01.00.50.30.2
0.3
0.2
30
C
cb
0.7 7.0
P1-P3P4-P6P7-P7

2N4403RLRAG

Mfr. #:
Buy 2N4403RLRAG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 40V PNP
Lifecycle:
New from this manufacturer.
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