2N4403RLRAG

2N4403
http://onsemi.com
4
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 50030
I
C
/I
B
= 10
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2 V
t
d
@ V
BE(off)
= 0
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 50030
V
CC
= 30 V
I
C
/I
B
= 10
t
r
, RISE TIME (ns)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
t
s
, STORAGE TIME (ns)
10 20 50 70 100 200 300 50030
100
20
70
50
200
30
I
C
/I
B
= 10
I
C
/I
B
= 20
I
B1
= I
B2
t
s
= t
s
− 1/8 t
f
6
8
10
0
4
2
0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= −10 Vdc, T
A
= 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 430 W
I
C
= 500 mA, R
S
= 560 W
I
C
= 50 mA, R
S
= 2.7 kW
I
C
= 100 mA, R
S
= 1.6 kW
R
S
= OPTIMUM SOURCE RESISTANCE
50 100 200 500 1k 2k 5k 10k 20k 50k
6
8
10
0
4
2
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
f = 1 kHz
I
C
= 50 mA
100 mA
500 mA
1.0 mA
2N4403
http://onsemi.com
5
h PARAMETERS
V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25°C
This group of graphs illustrates the relationship between
h
fe
and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4403 lines, and the same units were
used to develop the correspondingly−numbered curves on
each graph.
Figure 10. Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3
300
700
30
200
100
1000
h
fe
, CURRENT GAIN
h
ie
, INPUT IMPEDANCE (OHMS)
Figure 11. Input Impedance
I
C
, COLLECTOR CURRENT (mAdc)
100k
100
50
5.0 7.0
20k
10k
5k
2k
1k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0
Figure 12. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mAdc)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3
0.1
20
Figure 13. Output Admittance
I
C
, COLLECTOR CURRENT (mAdc)
500
1.0
5.0 7.0
50
20
10
5.0
2.0
5.0
2.0
1.0
0.5
0.2
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
−4
2N4403 UNIT 1
2N4403 UNIT 2
0.1 0.2 0.5 0.7 1.0 2.0 3.0
10
0.3 5.0 7.0
500
70
50k
500
200
2N4403 UNIT 1
2N4403 UNIT 2
2N4403 UNIT 1
2N4403 UNIT 2
10
2N4403 UNIT 1
2N4403 UNIT 2
100
2N4403
http://onsemi.com
6
STATIC CHARACTERISTICS
Figure 14. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 500.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
0.070.050.030.020.01
10 mA 100 mA
10 20 30
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT GAIN
0.5 2.0 3.0 10 50 700.2 0.3
0.2
1001.00.7 50030205.0 7.0
FE
T
J
= 125°C
−55°C
2.0
200 300
25°C
V
CE
= 1.0 V
V
CE
= 10 V
Figure 16. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 17. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
0.5
0
0.5
1.0
1.5
2.0
500
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ V
CE
= 10 V
q
VC
for V
CE(sat)
q
VS
for V
BE
200
0.1 0.2 0.5
COEFFICIENT (mV/ C)°
2.5
1.0 2.0 5.0 10 20
50 100
500
200
0.1 0.2 0.5
500 mA
0.005

2N4403RLRAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 40V PNP
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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