AT93C46C-10PI-2.7

4
AT93C46C
1122DSEEPR08/02
Note: 1. This parameter is characterized and is not 100% tested.
AC Characteristics
Applicable over recommended operating range from T
A
=-40°Cto+85°C, V
CC
=+2.5Vto+5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Units
f
SK
SK Clock Frequency 4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
0
0
0
2
1
0.5
MHz
t
SKH
SK High Time 4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
250
250
500
ns
t
SKL
SK Low Time 4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
250
250
500
ns
t
CS
Minimum CS Low Time 4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
250
250
500
ns
t
CSS
CS Setup Time
Relative to SK
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
50
50
100
ns
t
DIS
DI Setup Time
Relative to SK
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
100
100
200
ns
t
CSH
CS Hold Time Relative to SK 0 ns
t
DIH
DI Hold Time
Relative to SK
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
100
100
200
ns
t
PD1
Output Delay to 1
AC Test
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
250
250
500
ns
t
PD0
Output Delay to 0
AC Test
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
250
250
500
ns
t
SV
CS to Status Valid
AC Test
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
250
250
500
ns
t
DF
CS to DO in High Impedance
AC Test
CS = V
IL
4.5V V
CC
5.5V
2.7V V
CC
5.5V
2.5V V
CC
5.5V
100
100
200
ns
t
WP
Write Cycle Time 10 ms
4.5V V
CC
5.5V 3 ms
Endurance
(1)
5.0V, 25°C, Page Mode
1M
Write
Cycle
5
AT93C46C
1122DSEEPR08/02
Functional
Description
The AT93C46C is accessed via a simple and versatile three-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host pro-
cessor. A valid instruction starts with a rising edge of CS and consists of a Start Bit
(logic 1) followed by the appropriate Op Code and the desired memory Address
location.
READ (READ): The Read (READ) instruction contains the Address code for the mem-
ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic 0) precedes the 16-bit data output string.
ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the
Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable
(EWEN) instruction must be executed first before any programming instructions can be
carried out. Please note that once in the Erase/Write Enable state, programming
remains enabled until an Erase/Write Disable (EWDS) instruction is executed or V
CC
power is removed from the part.
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical 1 state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS
).
A logic 1 at pin DO indicates that the selected memory location has been erased, and
the part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 16 bits of data to be writ-
ten into the specified memory location. The self-timed programming cycle t
WP
starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (t
CS
). A logic 0 at DO indicates that programming is still in progress. A logic
1indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A
Ready/Busy Status cannot be obtained if the CS is brought high after the end of
the self-timed programming cycle, t
WP
.
Instruction Set for the AT93C46C
Instruction SB Op Code
Address
Commentsx16
READ 1 10 A
5
-A
0
Reads data stored in memory, at specified address.
EWEN 1 00 11XXXX Write enable must precede all programming modes.
ERASE 1 11 A
5
-A
0
Erase memory location A
n
-A
0
.
WRITE 1 01 A
5
-A
0
Writes memory location A
n
-A
0
.
ERAL 1 00 10XXXX Erases all memory locations. Valid only at V
CC
= 4.5V to 5.5V.
WRAL 1 00 01XXXX Writes all memory locations. Valid only at V
CC
= 4.5V to 5.5V.
EWDS 1 00 00XXXX Disables all programming instructions.
6
AT93C46C
1122DSEEPR08/02
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the
memory array to the logic 1 state and is primarily used for testing purposes. The DO
pin outputs the READY/BUSY status of the part if CS is brought high after being kept
low for a minimum of 250 ns (t
CS
). The ERAL instruction is valid only at V
CC
=5.0V±
10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory loca-
tions with the data patterns specified in the instruction. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (t
CS
). The WRAL instruction is valid only at V
CC
=5.0V± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the READ instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.

AT93C46C-10PI-2.7

Mfr. #:
Manufacturer:
Description:
IC EEPROM 1K SPI 2MHZ 8DIP
Lifecycle:
New from this manufacturer.
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