This is information on a product in full production.
June 2012 Doc ID 13790 Rev 3 1/15
15
PD84010-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet — production data
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 10 W with 14.3 dB gain @ 870 MHz /
7.5 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European
directive
Description
The PD84010-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7.5 V in common source mode at
frequencies of up to 1 GHz. PD84010-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD84010-E’s superior linearity performance
makes it an ideal solution for portable radio
applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Table 1. Device summary
Order codes Package Packing
PD84010-E PowerSO-10RF (formed lead) Tube
PD84010TR-E PowerSO-10RF (formed lead) Tape and reel
PD84010STR-E PowerSO-10RF (straight lead) Tape and reel
www.st.com