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PD84010-E

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics PD84010-E
4/15 Doc ID 13790 Rev 3
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 ESD protection characteristics
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V V
DS
= 25 V 1 μA
I
GSS
V
GS
= 5 V V
DS
= 0 V 1 μA
V
GS(Q)
V
DS
= 10 V
I
D
= 250 mA 3.4 4.6 V
V
DS(ON)
V
GS
= 10 V I
D
= 3 A 0.64 0.7 V
C
ISS
V
GS
= 0 V V
DS
= 7 V f = 1 MHz 77 pF
C
OSS
V
GS
= 0 V V
DS
= 7 V f = 1 MHz 54 pF
C
RSS
V
GS
= 0 V V
DS
= 7 V f = 1 MHz 2.3 pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P3dB V
DD
= 7.5 V, I
DQ
= 300 mA f = 870 MHz 10 12 W
G
P
V
DD
= 7.5 V, I
DQ
= 300 mA, P
OUT
= 2 W, f = 870 MHz 15 16.3 dB
h
D
V
DD
= 7.5 V, I
DQ
= 300 mA, P
OUT
= P3dB, f = 870 MHz 60 73 %
Load
mismatch
V
DD
= 9.5 V, I
DQ
= 300 mA, P
OUT
= 20 W, f = 870 MHz
All phase angles
20:1 VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
PD84010-E Impedance
Doc ID 13790 Rev 3 5/15
2.4 Moisture sensitivity level
3 Impedance
Figure 2. Current conventions
Table 7. Moisture sensitivity level
Test methodology Rating
J-STD-020B MSL 3
Table 8. Impedance data
Frequency (MHz) Z
IN
(Ω)Z
DL
(Ω)
870 MHz 0.35 +j 1.1 1.53 -j 0.23
Typical performance PD84010-E
6/15 Doc ID 13790 Rev 3
4 Typical performance
Figure 3. Threshold voltage Figure 4. DC output characteristic
Figure 5. ID vs VGS Figure 6. Capacitances vs voltage
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30 35 40 45
Vds (V)
Caoacitance (pF)
Ciss Crss Coss
P1-P3P4-P6P7-P9P10-P12P13-P15

PD84010-E

Mfr. #:
Buy PD84010-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF power tran LdmoST N-chann
Lifecycle:
New from this manufacturer.
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