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SST13LP05-MLCF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
Microchip Proprietary Information
©2012 Silicon Storage Technology, Inc. DS75032A 10/12
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 29 dB gain across 2.4-2.5 GHz
– Typically 29-26 dB gain across 4.9-5.8 GHz10/12
• High linear output power:
– >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5
GHz
– Meets 802.11b OFDM ACPR requirement up to 23.5
dBm across 2.4-2.5 GHz
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
across 2.4-2.5 GHz
– Added EVM ~4% up to 19 dBm for
54 Mbps 802.11g signal across 2.4-2.5 GHz
– >24 dBm P1dB across 4.9-5.8 GHz
– Meets 802.11a OFDM ACPR requirement up to 22.5
dBm across 4.9-5.8 GHz
– Added EVM ~4% up to 18 dBm for
54 Mbps 802.11a signal across 4.9-5.8 GHz
• High power-added efficiency/Low operating cur-
rent for 802.11a/b/g applications
– ~160 mA @ P
OUT
= 19 dBm for 802.11g
– ~235 mA @ P
OUT
= 23.5 dBm for 802.11b
– ~270 mA @ P
OUT
= 18 dBm for 802.11a
• Built-in Ultra-low I
REF
power-up/down control
–I
REF
<2mA
• High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C across
2.4-2.5 GHz
– ~3/1 dB gain/max linear power variation between 0°C to
+85°C across 4.9-5.8 GHz
– ±0.5 dB detector variation between 0°C to +85°C
• Low shut-down current (< 2 µA)
• 20 dB dynamic range on-chip power detection
• Built-in input/output matching
• Packages available
– 16-contact LGA package (4mm x 4mm)
• All non-Pb (lead-free) devices are ROHS compliant.
Applications
• WLAN (IEEE 802.11a/g/b)
• Japanese WLAN
• HyperLAN2
• Multimedia
• Home RF
• Cordless phones
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
SST13LP05
The SST13LP05 is a fully matched, dual-band power amplifier module (PAM) based
on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent
RF performance, temperature-stable power detectors, and low-current analog on/
off control interfaces. The SST13LP05 provides stable RF and power detector per-
formance over a large VCC power supply variation, with an ultra-low shut-down cur-
rent. The SST13LP05 is ideal for the final stage power amplification in both battery-
powered 802.11a/b/g WLAN transmitters and access point applications.
Microchip Proprietary Information
©2012 Silicon Storage Technology, Inc. DS75032A 10/12
2
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP05
Data Sheet
Product Description
The SST13LP05 is a fully matched, dual-band power amplifier module (PAM) based on the highly-reli-
able InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable
power detectors, and low-current analog on/off control interfaces. The SST13LP05 provides stable RF
and power detector performance over a large V
CC
power supply variation, with an ultra-low shut-down
current.
With a near-zero Rest of Bill of Materials (RBOM), the SST13LP05 is designed for 802.11a/b/g appli-
cations covering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for U.S., European, and Japanese
markets.
The SST13LP05 has excellent linearity, typically 4% added Error Vector Magnitude (EVM) at 19 dBm
output power. This output power is essential for 54 Mbps 802.11g operation while meeting 802.11g
spectrum mask at 23 dBm and 802.11b spectrum mask at 23.5 dBm. For 802.11a operation, the
SST13LP05 typically demonstrates <4% added EVM at 18 dBm output power while meeting 802.11a spec-
trum mask at 22.5 dBm.
The SST13LP05 also has wide-range (>20 dB), temperature-stable (±0.5 dB across 0°C to +85°C),
directionally-coupled, power detectors which provide a reliable and cost-effective solution to board-
level power control. The device’s analog on/off control can be driven by an analog or digital control sig-
nal from either a transceiver or baseband chip.
These features, coupled with low operating current, make the SST13LP05 ideal for the final stage
power amplification in both battery-powered 802.11a/b/g WLAN transmitters and access point applica-
tions.
The SST13LP05 is offered in a 16-contact LGA package. See Figure 2 for pin assignments and Table 1
for pin descriptions.
Microchip Proprietary Information
©2012 Silicon Storage Technology, Inc. DS75032A 10/12
3
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP05
Data Sheet
Functional Blocks
Figure 1: Functional Block Diagram
V
REG
_LB
V
CC
_LB
NC
Det_LB
V
REG
_HB
NC
V
CC
_HB
Det_HB
NC
RF
OUT
_LB
RF
OUT
_HB
NC
NC
RF
IN
_LB
RF
IN
_HB
NC
1318 B1.0
56 8
16 15 14
9
11
12
10
13
2
1
4
3
7
Bias Network
Bias Network
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

SST13LP05-MLCF

Mfr. #:
Buy SST13LP05-MLCF
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4-2.5/4.9-5.8GHz 3.3V 802.11 a/b/g
Lifecycle:
New from this manufacturer.
Delivery:
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